The influence of the bottom TiO2 interfacial layer grown by atomic layer deposition on the
ferroelectric properties of the TiN/Hf0. 5Zr0. 5O2/TiN capacitors is systematically …

Hafnia-based ferroelectric memory devices with excellent ferroelectricity, low power
consumption, and fast operation speed have attracted considerable interest with the ever …

HfAlO film‐based ferroelectric memory is a strong contender for the next‐generation
nonvolatile memories. However, the remanent polarization intensity of HfAlO films is small …

Atomic layer engineering is investigated to tailor the morphotropic phase boundary (MPB)
between antiferroelectric, ferroelectric, and paraelectric phases. By increasing the HfO2 …

In this Letter, a high-pressure annealing (HPA) process is proposed as a way to reduce the
thermal budget of Hf 0.5 Zr 0.5 O 2 (HZO) thin films with ferroelectric behaviors. The low …

For low-voltage reliable operation of ferroelectric devices, the scaling of Hf ZrxO2 (HZO)
thickness () is important. Despite the importance of scaling, ferroelectricity degradation and …

Low-temperature deposition of inorganic ferroelectric (FE) thin films is highly demanded for
lowering the environmental impact through lesser energy consumption. Doped HfO2-based …

Ferroelectricity is a material property that enables a large variety of device applications like
nonvolatile memories, variable capacitors, sensors, actuators, and energy …

High-performance ferroelectric devices compatible with the Back-End-of-Line (BEOL)
process are necessary for their mass production and application. In this letter, pre …

In this study, the double remnant polarization (2Pr) is enhanced from≈ 2 to 25 µC cm− 2 at a
low applied voltage of±2 V (or from 10 to 35 µC cm− 2 at a voltage of±4 V) by decreasing the …