Robust Heteroepitaxial Growth of GaN Formulated on Porous TiN Buffer Layers
Gallium nitride (GaN) heteroepitaxial growth is widely studied as a semiconductor material
due to its various benefits. Especially, development of a buffer layer between GaN and the …
due to its various benefits. Especially, development of a buffer layer between GaN and the …
GaN nucleation on patterned sapphire substrate with different shapes for improved GaN overgrowth
MIM Taib, SN Waheeda, F Jasman, MZM Yusop… - Vacuum, 2022 - Elsevier
GaN was grown on cone-and dome-patterned sapphire (CPSS and DPSS) at different
nucleation times of 40, 80 and 160 s. The GaN was also grown on flat sapphire substrate …
nucleation times of 40, 80 and 160 s. The GaN was also grown on flat sapphire substrate …
Heteroepitaxial growth of GaN on various powder compounds (AlN, LaN, TiN, NbN, ZrN, ZrB 2 , VN, BeO) by hydride vapor phase epitaxy
We investigated the nucleation and growth behavior of GaN on various powders by hydride
vapor phase epitaxy. In relative comparison, the nucleation tendency of GaN on each …
vapor phase epitaxy. In relative comparison, the nucleation tendency of GaN on each …
[图书][B] High-Temperature Growth of Gallium Nitride Using the Ammonothermal Method with Ammonium Chloride Mineralizer
TF Malkowski - 2016 - search.proquest.com
Gallium nitride (GaN) has become an important semiconductor for the optoelectronics and
power electronics fields in the pursuit of high efficiency devices. However, the lack of a …
power electronics fields in the pursuit of high efficiency devices. However, the lack of a …
Влияние толщины нанослоя Ti на процесс самоотделения толстых эпитаксиальных слоев GaN
АА Югов, СС Малахов, АА Донсков… - Физика и техника …, 2016 - mathnet.ru
Показано влияние типа подложки–сапфир (c-и r-ориентации) или темплейт GaN/Al $ _
{2} $ O $ _ {3} $(c-и r-ориентации)–на процесс нитридизации аморфного нанослоя …
{2} $ O $ _ {3} $(c-и r-ориентации)–на процесс нитридизации аморфного нанослоя …
Effect of the Ti-nanolayer thickness on the self-lift-off of thick GaN epitaxial layers
AA Yugov, SS Malahov, AA Donskov, MP Duhnovskii… - Semiconductors, 2016 - Springer
The effect of the type of substrate, sapphire substrate (c-and r-orientation) or GaN/Al 2 O 3
template (c-and r-orientations), on the nitridation of an amorphous titanium nanolayer is …
template (c-and r-orientations), on the nitridation of an amorphous titanium nanolayer is …