Sub-10 nm two-dimensional transistors: Theory and experiment
Presently Si-based field-effect transistors (FETs) are approaching their physical limit, and
further scaling their gate length down to the sub-10 nm region is becoming extremely …
further scaling their gate length down to the sub-10 nm region is becoming extremely …
Two-dimensional tellurium: progress, challenges, and prospects
Since the successful fabrication of two-dimensional (2D) tellurium (Te) in 2017, its
fascinating properties including a thickness dependence bandgap, environmental stability …
fascinating properties including a thickness dependence bandgap, environmental stability …
Efficient Ohmic contacts and built-in atomic sublayer protection in MoSi2N4 and WSi2N4 monolayers
Metal contacts to two-dimensional (2D) semiconductors are often plagued by the strong
Fermi level pinning (FLP) effect which reduces the tunability of the Schottky barrier height …
Fermi level pinning (FLP) effect which reduces the tunability of the Schottky barrier height …
Schottky barrier heights in two-dimensional field-effect transistors: from theory to experiment
Over the past decade, two-dimensional semiconductors (2DSCs) have aroused wide
interest due to their extraordinary electronic, magnetic, optical, mechanical, and thermal …
interest due to their extraordinary electronic, magnetic, optical, mechanical, and thermal …
Tellurene: its physical properties, scalable nanomanufacturing, and device applications
Tellurium (Te) has a trigonal crystal lattice with inherent structural anisotropy. Te is
multifunctional, eg, semiconducting, photoconductive, thermoelectric, piezoelectric, etc., for …
multifunctional, eg, semiconducting, photoconductive, thermoelectric, piezoelectric, etc., for …
Physics of electron emission and injection in two‐dimensional materials: theory and simulation
Electrically contacting two‐dimensional (2D) materials is an inevitable process in the
fabrication of devices for both the study of fundamental nanoscale charge transport physics …
fabrication of devices for both the study of fundamental nanoscale charge transport physics …
Performance limit of monolayer MoSi 2 N 4 transistors
Recently, a novel two-dimensional (2D) MoSi2N4 has been successfully synthesized and
features high carrier mobility, moderate bandgap, and outstanding ambient stability (Science …
features high carrier mobility, moderate bandgap, and outstanding ambient stability (Science …
Phase transitions and water splitting applications of 2D transition metal dichalcogenides and metal phosphorous trichalcogenides
Abstract 2D layered materials turn out to be the most attractive hotspot in materials for their
unique physical and chemical properties. A special class of 2D layered material refers to …
unique physical and chemical properties. A special class of 2D layered material refers to …
Tunable Schottky Barrier and Efficient Ohmic Contacts in MSi2N4 (M = Mo, W)/2D Metal Contacts
Monolayer MSi2N4 (M= Mo, W) has been fabricated and proposed as a promising channel
material for field-effect transistors (FETs) due to the high electron/hole mobility. However, the …
material for field-effect transistors (FETs) due to the high electron/hole mobility. However, the …
Thermoelectric generation via tellurene for wearable applications: recent advances, research challenges, and future perspectives
E Liu, A Negm, MMR Howlader - Materials Today Energy, 2021 - Elsevier
Wearable real-time, non-invasive personalized health monitoring sensors and low-power
electronics critically necessitate alternative power supplies because batteries have proven …
electronics critically necessitate alternative power supplies because batteries have proven …