This paper presents the first 28-/37-/39-GHz linear Doherty power amplifier (PA) in silicon for
broadband fifthgeneration (5G) applications. We introduce a new transformer-based on-chip …

The opening of spectral bands in the millimeter-wave (mm-Wave) spectrum from 26 GHz
and extending up to the E-band poses new challenges to the power amplifier (PA) design for …

Silicon-based millimeter-wave (mm-Wave) power amplifiers (PAs) with high power and high
peak/back-off efficiency are highly desired to efficiently amplify multi-Gb/s 5G NR signals …

To increase the voltage handling capability of scaled CMOS-based circuits, series
connection (stacking) of transistors has been demonstrated in recently reported mm-wave …

A frequency reconfigurable millimeter-wave (mm-wave) power amplifier (PA), which can be
programmed to operate efficiently for a wide swathe of the spectrum, approaching an …

Spectrally efficient operation with high power and high efficiency at deep backoff will be
critical for the next generation of millimeter-wave (mm-wave) transmitters for 5G and beyond …

We review the recent advances on the implementation of electronic circuits that operate in
the millimeter-wave (30–300 GHz) and terahertz (300–3000 GHz) frequency ranges. The …

Impedance transformation is one of the central concepts in high-frequency circuits and
systems and is used ubiquitously for optimal power matching, noise matching, and high …

Polarization (pol) selectivity has been widely adopted in modern RF transceivers to enable
the channel diversity. This paper utilizes orthogonal pol modes to support simultaneous …

This article introduces an architecture for a millimeter-wave multi-mode radar transmitter IC,
which supports three key radar waveforms: 1) continuous-wave (CW/FMCW); 2) pulse; and …