Ferroelectric domain walls have emerged as a new type of interface in which the dynamic
characteristics of ferroelectricity introduce the element of spatial mobility, allowing real-time …

Over the last 30 years, the study of ferroelectric oxides has been revolutionized by the
implementation of epitaxial‐thin‐film‐based studies, which have driven many advances in …

Ferroelectrics possess a spontaneous polarization that is switchable by an electric field and
is critical for the development of low-energy nanoelectronics and neuromorphic applications …

Investigations concerning oxygen deficiency will increase our understanding of those factors
that govern the overall material properties. Various studies have examined the relationship …

Hexagonal ABO 3 oxides (A, B= cation) are a class of rich materials for realizing novel
quantum phenomena. Their hexagonal symmetry, oxygen trigonal bipyramid coordination …

Conductive ferroelectric domain walls (DWs) hold great promise for neuromorphic
nanoelectronics as they can contribute to realize multi-level diodes and nanoscale …

The primary order parameter of hybrid improper ferroelectricity (HIF) is not spontaneous
polarisation but nonpolar modes such as oxygen octahedral rotations (OORs), antipolar, or …

Polarization in improper ferroelectrics is believed to be robust against the depolarizing field.
However, this characteristic appears to be disrupted in hexagonal ferrite and manganite …

To determine the effect of depolarization and the critical thickness in improper-ferroelectric
hexagonal-ferrite thin films, we investigate the polarization switching of a …

Monitoring the charged defect concentration at the nanoscale is of critical importance for
both the fundamental science and applications of ferroelectrics. However, up‐to‐date, high …