Room temperature electroluminescence (EL) was obtained for the first time from a Si-based
light emitting diode with semiconducting silicide (β-FeSi 2) active region. The peak …

This critical review surveys β-FeSi2 research over the years with focus on reviewing recent
development in β-FeSi2-based light emitting diodes (LEDs). Based on theoretical analyses …

Research on efficient light emission from silicon devices is moving toward leading-edge
advances in components for nano-optoelectronics and related areas. A silicon laser is being …

Effects of structural changes near the interface, the implantation dose and the precipitate
morphology on photoluminescence (PL) properties of ion-beam synthesized (IBS) β-FeSi2 …

Electronic bands nearby the gap for several strained structures corresponding to the
epitaxial relationships of β− FeSi 2 on Si (111) have been calculated by first-principles …

We have fabricated Si/β-FeSi 2 particles/Si structures by reactive deposition epitaxy for β-
FeSi 2 and molecular-beam epitaxy (MBE) for Si. It was found that the photoluminescence …

In this paper we present photoluminescence, photoreflectance, and absorbance
measurements on silicon samples with β− FeSi 2 precipitates, as structurally characterized …

Nickel-silicon compounds, as most of the transition metal silicides, show peculiar
thermodynamic and kinetic behaviours. The reason resides in the metastability of a rich …

Semiconducting iron disilicide (β-FeSi2) is considered as a promising material for silicon
based optoelectronics due to its band gap of about 0.8 eV. 1, 2 This energy corresponds to a …

In this paper, we summarize the results of an extensive investigation on the properties of
MOS-type light emitting devices based on silicon nanostructures. The performances of …