The rapid development of information technology has led to urgent requirements for high
efficiency and ultralow power consumption. In the past few decades, neuromorphic …

This review addresses resistive switching devices operating according to the bipolar
valence change mechanism (VCM), which has become a major trend in electronic materials …

Brain-inspired computing enabled by memristors has gained prominence over the years due
to the nanoscale footprint and reduced complexity for implementing synapses and neurons …

To realize highly efficient neuromorphic computing that is comparable to biological
counterparts, bioinspired computing systems, consisting of biorealistic artificial synapses …

Bipolar resistive switching (BRS) cells based on the valence change mechanism show great
potential to enable the design of future non-volatile memory, logic and neuromorphic circuits …

Memristive switching in nanoionic devices involves the interplay between physical,
electrochemical and thermochemical processes, which can occur in the bulk or at interfaces …

Though resistive random access memory (ReRAM), a promising emerging memory
technology, has achieved remarkable progress in technology development in recent years …

The rapid development of big-data analytics (BDA), internet of things (IoT) and artificial
intelligent Technology (AI) demand outstanding electronic devices and systems with faster …

Interface‐type (IT) resistive switching (RS) memories are promising for next generation
memory and computing technologies owing to the filament‐free switching, high on/off ratio …

The fast development of the Internet of things (IoT) promises to deliver convenience to
human life. However, a huge amount of the data is constantly generated, transmitted …