Since the application of silicon materials in electronic devices in the 1950s, microprocessors
are continuously getting smaller, faster, smarter, and larger in data storage capacity. One …

The developments in advanced interconnect technology for semiconductor logic devices for
the mitigation of plasma‐induced damage to low‐dielectric‐constant (low‐k) materials …

This paper presents an in-depth overview of the application and impact of UV/VUV light in
advanced interconnect technology. UV light application in BEOL historically was mainly …

Cu/low-k integration by conventional damascene approach is becoming increasingly difficult
as critical dimensions scale down. An alternative integration scheme is studied based on the …

Surface sealing effects on the diffusion of metal atoms in porous organosilicate glass (OSG)
films were studied by monoenergetic positron beams. For a Cu (5 nm)/MnN (3 nm)/OSG …

The wettability control of surfaces is a significant issue in many industrial fields such as
encapsulation, water repellency enhancement, oil recovery, etc. From a practical point of …

Modification of spin-on-deposited porous PMO (periodic mesoporous organosilica) ultralow-
k (ULK) SiCOH films (k= 2.33) containing both methyl terminal and methylene bridging …

A longstanding challenge in ultralarge‐scale integration has been the continued
improvement in low‐dielectric‐constant (low‐k) interlayer dielectric materials and other …

The micro-capillary condensation of a new high boiling point organic reagent (HBPO), is
studied in a periodic mesoporous oxide (PMO) with∼ 34% porosity and k-value∼ 2.3. At a …

Porous organosilicate glass thin films, with k-value 2.0, were exposed to 147 nm vacuum
ultra-violet (VUV) photons emitted in a Xenon capacitive coupled plasma discharge. Strong …