Evaluation of In (Ga) As capping in a multilayer coupled InAs quantum dot system: Growth strategy involving the same overgrowth percentage
Abstract Strain-coupled multilayer Quantum Dot (QD) structures draw a great attention these
days because of their superior optical and device performance. However, these coupled …
days because of their superior optical and device performance. However, these coupled …
Influence of Sb composition on the band alignment and optical characteristics of strain coupled vertically aligned InAs/GaAsSb quantum dots
R Gourishetty, SR Shriram, DP Panda… - Quantum Optics and …, 2021 - spiedigitallibrary.org
The influence of the Sb composition both on the band-alignment and the optical
characteristics of strain-coupled vertically aligned InAs/GaAsSb Stranski-Krastanov (SK) …
characteristics of strain-coupled vertically aligned InAs/GaAsSb Stranski-Krastanov (SK) …
Optical and structural investigation of multilayer InAs SK QDs with In0. 15Ga0. 85As strain-reducing layer electronically coupled to SML QDs grown by molecular beam …
The effect of thin In0. 15Ga0. 85As strain-reducing layer on the structural and optical
characteristics of multilayer InAs/In (Ga) As Stranski-Krastanov (SK) quantum dots (QDs) …
characteristics of multilayer InAs/In (Ga) As Stranski-Krastanov (SK) quantum dots (QDs) …