Optimization of a Solution-Processed TiOx/(n)c-Si Electron-Selective Interface by Pre- and Postdeposition Treatments
Developing a vacuum-free and low-temperature deposition technique for dopant-free carrier-
selective materials without sacrificing their performance can reduce the fabrication cost and …
selective materials without sacrificing their performance can reduce the fabrication cost and …
Electrical and optical characterization of SiOxNy and SiO2 dielectric layers and rear surface passivation by using SiO2/SiOxNy stack layers with screen printed local Al …
In c-Si solar cells, surface recombination velocity increases as the wafer thickness
decreases due to an increase in surface to volume ratio. For high efficiency, in addition to …
decreases due to an increase in surface to volume ratio. For high efficiency, in addition to …
N2O plasma treatment for minimization of background plating in silicon solar cells with Ni–Cu front side metallization
In this paper we demonstrate that an additional nitrous oxide (N 2 O) plasma treatment step
after the regular SiN x: H anti-reflective coating (ARC) deposition practically eliminates …
after the regular SiN x: H anti-reflective coating (ARC) deposition practically eliminates …
Impact of interstitial oxygen trapped in silicon during plasma growth of silicon oxy-nitride films for silicon solar cell passivation
Low temperature oxidation of silicon in plasma ambient is a potential candidate for replacing
thermally grown SiO 2 films for surface passivation of crystalline silicon solar cells. In this …
thermally grown SiO 2 films for surface passivation of crystalline silicon solar cells. In this …