The emergence of new nonvolatile memory (NVM) technologies—such as phase change
memory, resistive, and spin-torque-transfer magnetic RAM—has been motivated by exciting …

Phase-change memory technology relies on the electrical and optical properties of certain
materials changing substantially when the atomic structure of the material is altered by …

Homomorphic encryption performs computations on encrypted data without decrypting,
thereby eliminating security issues during the data communication between clouds and …

Fifty years after its discovery, the ovonic threshold switching (OTS) phenomenon, a unique
nonlinear conductivity behavior observed in some chalcogenide glasses, has been recently …

Metal whiskers often grow across leads of electric equipment and electronic package
causing current leakage or short circuits and raising significant reliability issues. The nature …

Time-resolved threshold switching characteristics including transient parameters such as
delay time and holding voltage are reported for a nanoscale GeTe 6 Ovonic threshold …

Herein, a true random number generator (TRNG) based on a CuxTe1− x diffusive memristor
(DM) using its threshold switching (TS) behavior is reported. The intrinsic stochasticity of the …

NbO2 has the potential for a variety of electronic applications due to its electrically induced
insulator-to-metal transition (IMT) characteristic. In this study, we find that the IMT behavior of …

Resistance switching is studied in Au/HfO 2 (10 nm)/(Pt, TiN) devices, where HfO 2 is
deposited by atomic layer deposition. The study is performed using different bias modes, ie …

In this research, we investigate electrically driven threshold switching (TS) characteristics in
electrochemical metallization cells by adopting the field-induced nucleation theory. For this …