Phase-change memory technology relies on the electrical and optical properties of certain materials changing substantially when the atomic structure of the material is altered by …
Homomorphic encryption performs computations on encrypted data without decrypting, thereby eliminating security issues during the data communication between clouds and …
Fifty years after its discovery, the ovonic threshold switching (OTS) phenomenon, a unique nonlinear conductivity behavior observed in some chalcogenide glasses, has been recently …
Metal whiskers often grow across leads of electric equipment and electronic package causing current leakage or short circuits and raising significant reliability issues. The nature …
M Anbarasu, M Wimmer, G Bruns, M Salinga… - Applied Physics …, 2012 - pubs.aip.org
Time-resolved threshold switching characteristics including transient parameters such as delay time and holding voltage are reported for a nanoscale GeTe 6 Ovonic threshold …
KS Woo, J Kim, J Han, JM Choi, W Kim… - Advanced Intelligent …, 2021 - Wiley Online Library
Herein, a true random number generator (TRNG) based on a CuxTe1− x diffusive memristor (DM) using its threshold switching (TS) behavior is reported. The intrinsic stochasticity of the …
NbO2 has the potential for a variety of electronic applications due to its electrically induced insulator-to-metal transition (IMT) characteristic. In this study, we find that the IMT behavior of …
Resistance switching is studied in Au/HfO 2 (10 nm)/(Pt, TiN) devices, where HfO 2 is deposited by atomic layer deposition. The study is performed using different bias modes, ie …
J Yoo, J Park, J Song, S Lim, H Hwang - Applied Physics Letters, 2017 - pubs.aip.org
In this research, we investigate electrically driven threshold switching (TS) characteristics in electrochemical metallization cells by adopting the field-induced nucleation theory. For this …