Tandem solar cells are rationally designed and fabricated by stacking multiple subcells to
achieve power conversion efficiency well above the Shockley‐Queisser (SQ) limit. There is a …

III–V on Si multijunction solar cells exceede the efficiency limit of Si single‐junction devices
but are often challenged by expensive layer transfer techniques. Here, progress in the …

Gallium phosphide (GaP) is, in theory, a near-ideal heteroemitter for silicon solar cells due to
its electronic and crystal properties. In this paper, we present n-type gallium phosphide on p …

As single-junction Si solar cells approach their practical efficiency limits, a new pathway is
necessary to increase efficiency in order to realize more cost-effective photovoltaics …

An approach for epitaxial growth of GaP layers on Si substrates at low temperature (380 C)
by plasma-enhanced atomic layer deposition (PEALD) is explored. A significant …

A major hindrance to the development of devices integrating III-V materials on silicon, where
it is an active component of the device, is the preservation of its electronic quality. In this …

Abstract The GaP/Si heterojunctions fabricated by molecular beam epitaxy (MBE) and
plasma enhanced atomic layer deposition (PE-ALD) were studied. The degradation of …

Low-temperature plasma enhanced atomic layer deposition (PE-ALD) was successfully
used to grow silicon (Si) doped amorphous and microcrystalline gallium phosphide (GaP) …

III-V multijunction solar cells grown on a Si solar cell are an attractive approach to reduce the
cost of high-efficiency solar cells. When using the Si wafer as an active solar cell, it is crucial …

Amorphous and microcrystalline GaP films were deposited on Si substrates by time
modulated plasma enhanced deposition from trimethylgallium and phosphine using …