Structural transformations of TiO2 films with deposition temperature and electrical properties of nanostructure n-TiO2/p-Si heterojunction diode
Titanium oxide (TiO 2) films have been deposited on p-Si substrates by sol–gel method
using spin coating technique. Structural and morphological properties were studied as a …
using spin coating technique. Structural and morphological properties were studied as a …
Analysis of temperature-dependant current–voltage characteristics and extraction of series resistance in Pd/ZnO Schottky barrier diodes
MA Mayimele, JPJ van Rensburg, FD Auret… - Physica B: Condensed …, 2016 - Elsevier
We report on the analysis of current voltage (I–V) measurements performed on Pd/ZnO
Schottky barrier diodes (SBDs) in the 80–320 K temperature range. Assuming thermionic …
Schottky barrier diodes (SBDs) in the 80–320 K temperature range. Assuming thermionic …
Structural, morphological, optical and electrical properties of the Ti doped-ZnO (TZO) thin film prepared by RF sputter technique
C Bairam, Y Yalçın, Hİ Efkere, E Çokduygulular… - Physica B: Condensed …, 2021 - Elsevier
In this study, the structural, morphological, optical, as well as electrical properties of the
titanium doped (wt 5%) ZnO (TZO) thin film grown with the RF sputtering system was …
titanium doped (wt 5%) ZnO (TZO) thin film grown with the RF sputtering system was …
Investigation of barrier inhomogeneities in IV and CV characteristics of Ni/n-TiO2/p-Si/Al heterostructure in wide temperature range
In this study, we report on the growth and electrical characterization of Ni/n-TiO 2/p-Si/Al
heterojunction. A thin layer of TiO 2 was deposited on p-Si by pulsed layer deposition …
heterojunction. A thin layer of TiO 2 was deposited on p-Si by pulsed layer deposition …
The temperature dependent analysis of Au/TiO2 (rutile)/n-Si (MIS) SBDs using current–voltage–temperature (I–V–T) characteristics
In this study, the main electrical parameters of Au/TiO2 (rutile)/n-Si Schottky barrier diodes
(SBDs) were analyzed by using current–voltage–temperature (I–V–T) characteristics in the …
(SBDs) were analyzed by using current–voltage–temperature (I–V–T) characteristics in the …
Effect of TiO2 Thin Film with Different Dopants in Bringing Au-Metal into a Contact with n-Si
In this work, effects of TiO2 contribution together with two different doping as graphene oxide
(GO) and rubidium fluoride (RbF) are investigated at the interface of Au/n-Si metal …
(GO) and rubidium fluoride (RbF) are investigated at the interface of Au/n-Si metal …
Thickness-dependent physical properties of sputtered V2O5 films and Ti/V2O5/n-Si Schottky barrier diode
Abstract Vanadium pentoxide (V 2 O 5) thin films were grown by radio frequency magnetron
sputtering on n-type silicon (n-Si) and glass substrates at 500° C. V 2 O 5 thin films were …
sputtering on n-type silicon (n-Si) and glass substrates at 500° C. V 2 O 5 thin films were …
The current–voltage characteristics of V2O5/n-Si Schottky diodes formed with different metals
In this work, we reported the effect of different metal contacts on performance of metal–oxide–
semiconductor (MOS)-structured Schottky diodes formed with the vanadium pentoxide thin …
semiconductor (MOS)-structured Schottky diodes formed with the vanadium pentoxide thin …
Evaluation of dielectric properties of Au/TZO/n–Si structure depending on frequency and voltage
B Kınacı, C Bairam, Y Yalçın, E Cokduygulular… - Journal of Materials …, 2022 - Springer
This study examined the dielectric properties of the titanium doped ZnO (TZO) thin film. The
TZO thin film was deposited on the n-type Si substrate with the RF sputtering system and the …
TZO thin film was deposited on the n-type Si substrate with the RF sputtering system and the …
Yüksek Lisans Tezi
IIMD İSLAMCILIK, İIM CEMİYETİ - 2008 - search.proquest.com
TC BALIKESİR ÜNİVERSİTESİ SOSYAL BİLİMLER ENSTİTÜSÜ TARİH ANABİLİM DALI II.
MEŞRUTİYET DÖNEMİNDE İSLAMCILIK Page 1 TC BALIKESİR ÜNİVERSİTESİ SOSYAL …
MEŞRUTİYET DÖNEMİNDE İSLAMCILIK Page 1 TC BALIKESİR ÜNİVERSİTESİ SOSYAL …