We report on the multispectral properties of infrared photodetectors based on type II In As∕
Ga (In) Sb strain layer superlattices using an nBn heterostructure design. The optical and …

In this paper, the electro-optical properties of InAs/GaSb superlattice (SL) midwave infrared
photodiodes with different periods were investigated. Three devices with different SL …

Dark current characteristics of 7 Monolayers (ML) InAs/4 ML GaSb SL pin photodiodes are
simulated using ATLAS software. Using appropriate models and material parameters, we …

We report on structural, electrical, and optical characterizations of midwave infrared
InAs/GaSb superlattice (SL) pin photodiodes. High-quality SL samples, with 1 μ m thick …

Abstract Strained HgTe/CdZnTe or InAs/GaInSb, and essentially unstrained HgTe/CdTe
superlattices (SLs), are possible materials systems for implementation in future-generation …

The development of type-II InAs/GaSb superlattice (SL) detectors with nBn and pin designs
for the long-wave infrared (LWIR) spectral region is discussed. The dependence of dark …

In this letter, TiO_2 nanocrystalline film was prepared on SrTiO_3 (001) substrate to form an
nn heterojunction active layer. Interdigitated Au electrodes were deposited on the top of …

Time-resolved photoluminescence (TRPL) spectroscopy is used to study the minority-carrier
lifetime in mid-wavelength infrared, n-type, InAs/Ga 1− x In x Sb type II superlattices (T2SLs) …

We present a type-II superlattice period with a modified InAs to GaSb thickness ratio for
midinfrared detection. In this kind of structure, the large electron-hole wave-function overlap …

The collaborative development of infrared detector materials by the Army Research
Laboratory and Stony Brook University has led to new fundamental understandings of …