[HTML][HTML] Electrostatically actuated nanobeam-based nanoelectromechanical switches–materials solutions and operational conditions

L Jasulaneca, J Kosmaca, R Meija… - Beilstein journal of …, 2018 - beilstein-journals.org
This review summarizes relevant research in the field of electrostatically actuated nanobeam-
based nanoelectromechanical (NEM) switches. The main switch architectures and structural …

Sub-10 fJ/bit radiation-hard nanoelectromechanical non-volatile memory

YB Lee, MH Kang, PK Choi, SH Kim, TS Kim… - Nature …, 2023 - nature.com
With the exponential growth of the semiconductor industry, radiation-hardness has become
an indispensable property of memory devices. However, implementation of radiation …

All metal nanoelectromechanical switch working at 300° C for rugged electronics applications

Y Qian, BW Soon, P Singh, H Campanella, C Lee - Nanoscale, 2014 - pubs.rsc.org
An all metal based electrostatic nanoelectromechanical switch has been fabricated using a
one mask process. High temperature cycling behavior is demonstrated in a vacuum …

Embedded nano-electro-mechanical memory for energy-efficient reconfigurable logic

K Kato, V Stojanović, TJK Liu - IEEE Electron Device Letters, 2016 - ieeexplore.ieee.org
A compact, reconfigurable look-up table (LUT) implemented with an array of nano-electro-
mechanical memory cells formed using CMOS back-end-of-line metal layers is proposed …

Nanoprobe Based Information Processing: Nanoprobe‐Electronics

B Yi, L You, J Hong - Advanced Physics Research, 2024 - Wiley Online Library
With computational architectures becoming data‐centric and with the rise of in‐memory
computing, the role of memory will be ever more crucial. In turn, storing massive amount of …

Wafer‐Scale CMOS‐Compatible Electro‐Thermally Actuated Nanomechanical Non‐Volatile Switch with Out‐of‐Plane Electrode Configuration

YB Lee, PK Choi, MH Kang, SH Kim… - Advanced Electronic …, 2024 - Wiley Online Library
The rapid growth of data‐intensive applications has significantly heightened the concerns
about power consumption in current computing systems. From this perspective, there have …

Encapsulation of NEM memory switches for monolithic-three-dimensional (M3D) CMOS–NEM hybrid circuits

HC Jo, WY Choi - Micromachines, 2018 - mdpi.com
Considering the isotropic release process of nanoelectromechanical systems (NEMSs),
defining the active region of NEM memory switches is one of the most challenging process …

Fabrication and characterization of a vacuum encapsulated curved beam switch for harsh environment application

BW Soon, EJ Ng, VA Hong, Y Yang… - Journal of …, 2014 - ieeexplore.ieee.org
A vacuum-encapsulated silicon switch with a curved electrode is characterized for operation
in harsh environments. An ultraclean vacuum encapsulation process (episeal) seals the …

Switching voltage analysis of nanoelectromechanical memory switches for monolithic 3-D CMOS-NEM hybrid reconfigurable logic circuits

HM Lee, HC Jo, HS Kwon… - IEEE Transactions on …, 2018 - ieeexplore.ieee.org
The accurate calculation of switching voltage () is necessary for the reliable and low-power
operation of monolithic 3-D (M3D) CMOS-nanoelectromechanical (NEM) hybrid …

Analytical Release Voltage Model of Monolithic 3-D Integrated Nanoelectromechanical Memory Switches

JW Lee, GT Park, WY Choi - IEEE Transactions on Electron …, 2024 - ieeexplore.ieee.org
Determining the accurate release voltage (of nanoelectromechanical (NEM) memory
switches is essential for the operation of monolithic 3-D (M3D) CMOS-NEM circuits. In this …