Formation of oxide crystallites on the porous GaAs surface by electrochemical deposition

Y Suchikova, S Kovachov… - Nanomaterials and …, 2022 - journals.sagepub.com
We demonstrate how the formation of octahedral microcrystals of arsenic oxide As2O3 in the
form of arsenolite with a size of 200 nm to 10 μm can be initiated by the electrochemical …

Electrochemical Growth and Structural Study of the AlxGa1−xAs Nanowhisker Layer on the GaAs Surface

Y Suchikova, S Kovachov, I Bohdanov… - … of Manufacturing and …, 2023 - mdpi.com
This work presents a novel, cost-effective method for synthesizing AlxGa1− xAs
nanowhiskers on a GaAs surface by electrochemical deposition. The process begins with …

[PDF][PDF] Wet Chemical Synthesis of AlxGa1−xAs Nanostructures: Investigation of Properties and Growth Mechanisms

Y Suchikova, S Kovachov, I Bohdanov, M Konuhova… - Crystals, 2024 - teor.cfi.lu.lv
This study focuses on the wet chemical synthesis of AlxGa1− xAs nanostructures,
highlighting how different deposition conditions affect the film morphology and material …

Periodic Nanostructures by “Parquet Floor” Type on InP Surface

I Bohdanov, Y Bardus, S Kovachov… - 2022 IEEE 2nd …, 2022 - ieeexplore.ieee.org
We report on the synthesis of the periodic nanostructures of 'parquet floor'type on the surface
of single-crystal indium phosphide. The structures were formed by electrochemical etching …

[PDF][PDF] Surface Modification of Gallium Arsenide by Electrochemical Methods in Different Electrolyte Compositions

Y Suchikova, S Kovachov, A Lazarenko, H Lopatina… - Chemistry - science.lpnu.ua
1 We present the study of the n-GaAs surface modification by the electrochemical etching in
different electrolyte compositions. The possibility of forming the different micromorphology …