It has been several years since InGaN/GaN light-emitting diodes (LEDs) on nonpolar and
semipolar orientations were first demonstrated. Prominent performance and inherent …

Low-curvature and large-diameter GaN wafers are in high demand for the development of
GaN-based electronic devices. Recently, we have proposed the coalescence growth of GaN …

The stability of hydrogen on nonpolar and semipolar orientations during the metal-organic
vapor-phase epitaxy growth is systematically investigated on the basis of density-functional …

Highly uniform arrays of site-controlled GaN nanowires are synthesized by selective area
growth using a Si 3 N 4 mask and molecular beam epitaxy. Systematic modulation of the …

Reconstruction, adsorption and incorporation on various GaN surfaces are systematically
investigated using an ab initio-based approach that predicts the surface phase diagram as …

摘要经过近十年的探索, 作者在国际上率先突破了硅衬底高光效GaN 基蓝光LED
材料生长技术及其薄膜型芯片制造技术, 制备了内量子效率和取光效率均高达80 …

We have investigated the hydride vapor-phase epitaxy growth of-oriented GaN thick films on
patterned sapphire substrates (PSSs). From characterization by atomic force microscopy …

Patterned (113) Si substrates have been fabricated for the growth of (11-22) semi-polar
GaN, which completely eliminates one of the great issues in the growth of semi-polar GaN …

High‐quality semi‐polar (11‐22) GaN is obtained by means of growth on patterned (113)
silicon substrates featured with stripy grooves and extra periodic gaps which are …

The kinetics of Ga and N adatoms on semipolar GaN (11 bar 2 2) surfaces under growth
conditions is investigated employing density-functional total-energy calculations. The energy …