Surface Modification of a Titanium Carbide MXene Memristor to Enhance Memory Window and Low‐Power Operation

NB Mullani, DD Kumbhar, DH Lee… - Advanced Functional …, 2023 - Wiley Online Library
With the demand for low‐power‐operating artificial intelligence systems, bio‐inspired
memristor devices exhibit potential in terms of high‐density memory functions and the …

Promising materials and synthesis methods for resistive switching memory devices: a status review

GU Kamble, AP Patil, RK Kamat, JH Kim… - ACS Applied …, 2023 - ACS Publications
In recent years, the emergence of memory devices, especially resistive random-access
memories (RRAM), has been a front-runner in many technological applications. This is due …

Sprayed FeWO4 thin film-based memristive device with negative differential resistance effect for non-volatile memory and synaptic learning applications

AR Patil, TD Dongale, LD Namade, SV Mohite… - Journal of Colloid and …, 2023 - Elsevier
Resistive switching (RS) memories have attracted great attention as promising solutions to
next-generation non-volatile memories and computing technologies because of their simple …

Advancements in 2D layered material memristors: unleashing their potential beyond memory

KA Nirmal, DD Kumbhar, AV Kesavan… - npj 2D Materials and …, 2024 - nature.com
The scalability of two-dimensional (2D) materials down to a single monolayer offers exciting
prospects for high-speed, energy-efficient, scalable memristors. This review highlights the …

Y2O3-Based Crossbar Array for Analog and Neuromorphic Computation

S Kumar, DD Kumbhar, JH Park… - … on Electron Devices, 2022 - ieeexplore.ieee.org
Here, we report an implementation of ()-based memristive crossbar array (MCA) out of a total
dimension of () array fabricated by utilizing a dual ion beam sputtering (DIBS) system. The …

Energy efficient short-term memory characteristics in Ag/SnOx/TiN RRAM for neuromorphic system

O Kwon, J Shin, D Chung, S Kim - Ceramics International, 2022 - Elsevier
In this work, we demonstrate the short-term memory effects of an Ag/SnO x/TiN memristor
device using the spontaneous reset process for a neuromorphic system. The thickness and …

Dielectric and bipolar resistive switching properties of Ag doped As–S–Se chalcogenide for non-volatile memory applications

KO Čajko, DL Sekulić, SR Lukić-Petrović - Materials Chemistry and Physics, 2023 - Elsevier
In this study, dielectric and bipolar resistive switching properties of the chalcogenide from
the Ag–As 40 S 30 Se 30 system were investigated for potential application in non-volatile …

Power‐Efficient and Highly Uniform BiFeO3‐Based Memristors Optimized with TiInSnO Electrode Interfacial Effect

Q Xia, Y Qin, P Qiu - Advanced Electronic Materials, 2022 - Wiley Online Library
Memristor, processing data storage, and logic operation all‐in‐one, is expected to create a
new era of neuromorphic computing and digital logic. Here, this work demonstrates a …

Exploring statistical approaches for accessing the reliability of Y2O3-based memristive devices

DD Kumbhar, S Kumar, M Dubey, A Kumar… - Microelectronic …, 2024 - Elsevier
Memristive devices have emerged as promising alternatives to traditional complementary
metal-oxide semiconductor (CMOS)-based circuits in the field of neuromorphic systems …

Inverted spike-rate-dependent plasticity due to charge traps in a metal-oxide memristive device

MA Mishchenko, DI Bolshakov… - Journal of Physics D …, 2022 - iopscience.iop.org
We develop a model of Au/Ta/ZrO 2 (Y)/Ta 2 O 5/TiN/Ti memristive devices and
demonstrate, both experimentally and numerically, an inverted spike-rate-dependent …