[HTML][HTML] Facile electrochemical anodisation for generating nanopores across visible light-responsive cerium-titanium oxide heterojunctions for environmental …
Visible-light responsive heterojunctions exhibited unique performance in environmental
remediation due to their ability to form complexes with various Lewis bases and a synergetic …
remediation due to their ability to form complexes with various Lewis bases and a synergetic …
A comprehensive analysis of strain profile in the heterogeneously coupled Stranski-Krastanov (SK) on Submonolayer (SML) quantum dot heterostructures
In this study, we demonstrate a detailed strain analysis of the heterogeneously coupled
Stranski Krastanov (SK) on Submonolayer (SML) InAs quantum dot heterostructures with …
Stranski Krastanov (SK) on Submonolayer (SML) InAs quantum dot heterostructures with …
Novel approach for augmented carrier transfer and reduced Fermi level pinning effect in InAs surface quantum dots
The present work introduces an in-situ technique to tune the inter-dot coupling between
vertically aligned InAs surface and buried quantum dots (SQD and BQD). Here, we utilize …
vertically aligned InAs surface and buried quantum dots (SQD and BQD). Here, we utilize …
Rationally Engineered Vertically Aligned β‐Ga2−xWxO3 Nanocomposites for Self‐Biased Solar‐Blind Ultraviolet Photodetectors with Ultrafast Response
With the astonishing advancement of present technology and increasing energy
consumption, there is an ever‐increasing demand for energy‐efficient multifunctional …
consumption, there is an ever‐increasing demand for energy‐efficient multifunctional …
Higher performance optoelectronic devices with In0. 21Al0. 21Ga0. 58As/In0. 15Ga0. 85As capping of III-V quantum dots
Abstract Impact of combinational (In 0.21 Al 0.21 Ga 0.58 As/In 0.15 Ga 0.85 As and In 0.15
Ga 0.85 As/In 0.21 Al 0.21 Ga 0.58 As) capping on the strain, photoluminescence, and …
Ga 0.85 As/In 0.21 Al 0.21 Ga 0.58 As) capping on the strain, photoluminescence, and …
Hybrid strain-coupled multilayer SK and SML InAs/GaAs quantum dot heterostructure: Enabling higher absorptivity and strain minimization for enhanced optical and …
The size and shape of self-assembled quantum dots (QDs) in the top layer of a strain-
coupled multilayer Stranski-Krastanov (SK) type QD heterostructure is decided by the effect …
coupled multilayer Stranski-Krastanov (SK) type QD heterostructure is decided by the effect …
Resonant absorption for multilayer quantum well and quantum dot solar cells
Epitaxially grown quantum well and quantum dot solar cells suffer from weak light
absorption, strongly limiting their performance. Light trapping based on optical resonances …
absorption, strongly limiting their performance. Light trapping based on optical resonances …
Vertically coupled hybrid InAs sub-monolayer on InAs Stranski–Krastanov quantum dot heterostructure: toward next generation broadband IR detection
In the present article, we are introducing a novel heterogeneously coupled InAs
Submonolayer (SML) on Stranski-Krastanov (SK) quantum dot (QD) heterostructure with …
Submonolayer (SML) on Stranski-Krastanov (SK) quantum dot (QD) heterostructure with …
Evaluation of In (Ga) As capping in a multilayer coupled InAs quantum dot system: Growth strategy involving the same overgrowth percentage
Abstract Strain-coupled multilayer Quantum Dot (QD) structures draw a great attention these
days because of their superior optical and device performance. However, these coupled …
days because of their superior optical and device performance. However, these coupled …
Study on inter band and inter sub-band optical transitions with varying InAs/InGaAs sub-monolayer quantum dot heterostructure stacks grown by molecular beam …
Multiple stacking of sub-monolayer (SML) quantum dot (QD) heterostructure exhibits high
optical quality and is seen in devices like lasers diodes, photodetectors, etc. In this study, we …
optical quality and is seen in devices like lasers diodes, photodetectors, etc. In this study, we …