Penta-graphene has recently been proposed as a new allotrope of carbon composed of
pure pentagons, and displays many novel properties going beyond graphene [Zhang et al …

Silica is one of the key materials in many modern technological applications.'Surface
science'approach for understanding surface chemistry on silica-based materials, on the one …

Density functional theory simulation results of the atomic structure at the Si–SiO 2 interface
implies a non-abrupt transition of the band-gap within the oxide. The depth of the transition …

Silica (SiO2) is one of the key materials in many modern technological applications
including microelectronics, catalysis, and photonics. 1− 4 As an ultrathin film grown on metal …

By including poly-Si/SiO/sub 2/and Si/SiO/sub 2/interfacial transition (IFT) layers, an
excellent agreement in terms of both CV and JV characteristics is obtained between the …

The angle-resolved Si 2p photoelectron spectra arising from a interfacial transition layer
formed on a Si (100) were measured with a probing depth of nearly 2 nm. The novel …

The chemical structures of SiO 2/Si interfaces were studied by photoelectron spectroscopy
using high-brilliance soft X-ray with photon energy ranging from 500 to 1500 eV at Super …

The authors measure the difference of core-level binding energy shifts for Si 1 s and Si 2 p⁠,
Δ E 1 s-Δ E 2 p⁠, for various Si compounds using high-resolution high-energy synchrotron …

Using the high-brilliance synchrotron radiation at SPring-8, we determined the electron
escape depths in approximately 1‐nm-thick low-temperature oxide layers, which were …

Although the tunnel mass is indispensable to predict the gate leakage current of electron
devices, it has been regarded as an adjustable parameter to fit the calculated leakage …