[HTML][HTML] Spin independence of the strongly enhanced effective mass in ultra-clean SiGe/Si/SiGe two-dimensional electron system

MY Melnikov, AA Shakirov, AA Shashkin, SH Huang… - Scientific Reports, 2023 - nature.com
The effective mass at the Fermi level is measured in the strongly interacting two-dimensional
(2D) electron system in ultra-clean SiGe/Si/SiGe quantum wells in the low-temperature limit …

Density-tuned effective metal-insulator transitions in two-dimensional semiconductor layers: Anderson localization or Wigner crystallization

S Ahn, S Das Sarma - Physical Review B, 2023 - APS
Electrons (or holes) confined in two-dimensional (2D) semiconductor layers have served as
model systems for studying disorder and interaction effects for almost 50 years. In particular …

Metal–insulator transition and low-density phases in a strongly-interacting two-dimensional electron system

AA Shashkin, SV Kravchenko - Annals of Physics, 2021 - Elsevier
We review recent experimental results on the metal–insulator transition and low-density
phases in strongly-interacting, low-disordered silicon-based two-dimensional electron …

Magnetoconductivity in a disordered and interacting 2D p-SiGe quantum well

S Dlimi, A El Kaaouachi - Journal of the Korean Physical Society, 2020 - Springer
We report the magneto-conductivity in a disordered 2D p-SiGe quantum well with
interactions, which allows the weak anti-localization and the Zeeman effect to be ignored …

Inducing a metal-insulator transition in disordered interacting Dirac fermion systems via an external magnetic field

J Meng, R Mondaini, T Ma, HQ Lin - Physical Review B, 2021 - APS
We investigate metal-insulator transitions on an interacting two-dimensional Dirac fermion
system using the determinant quantum Monte Carlo method. The interplay between …

Triple-top-gate technique for studying the strongly interacting 2D electron systems in heterostructures

MY Melnikov, AA Shashkin, SH Huang, CW Liu… - Applied Physics …, 2024 - pubs.aip.org
We have developed a technique that dramatically reduces the contact resistances and
depletes a shunting channel between the contacts outside the Hall bar in ultra-high mobility …

Manifestation of strong correlations in transport in ultraclean SiGe/Si/SiGe quantum wells

AA Shashkin, MY Melnikov, VT Dolgopolov… - Physical Review B, 2020 - APS
We observe that in a strongly interacting two-dimensional electron system in ultraclean
SiGe/Si/SiGe quantum wells, the resistivity on the metallic side near the metal-insulator …

[HTML][HTML] Spin effect on the low-temperature resistivity maximum in a strongly interacting 2D electron system

AA Shashkin, MY Melnikov, VT Dolgopolov… - Scientific Reports, 2022 - nature.com
The increase in the resistivity with decreasing temperature followed by a drop by more than
one order of magnitude is observed on the metallic side near the zero-magnetic-field metal …

Spin and valley effects on the quantum phase transition in two dimensions

AA Shashkin, SV Kravchenko - Journal of Experimental and Theoretical …, 2022 - Springer
Using several independent methods, we find that the metal-insulator transition occurs in the
strongly-interacting two-valley two-dimensional electron system in ultra-high mobility …

Introduction to Semi-discrete Calculus

A Shachar - arXiv preprint arXiv:1012.5751, 2010 - arxiv.org
The Infinitesimal Calculus explores mainly two measurements: the instantaneous rates of
change and the accumulation of quantities. This work shows that scientists, engineers …