Making clean electrical contacts on 2D transition metal dichalcogenides
Y Wang, M Chhowalla - Nature Reviews Physics, 2022 - nature.com
Abstract 2D semiconductors, particularly transition metal dichalcogenides (TMDs), have
emerged as highly promising for new electronic technologies. However, a key challenge in …
emerged as highly promising for new electronic technologies. However, a key challenge in …
Improving stability in two-dimensional transistors with amorphous gate oxides by Fermi-level tuning
Electronic devices based on two-dimensional semiconductors suffer from limited electrical
stability because charge carriers originating from the semiconductors interact with defects in …
stability because charge carriers originating from the semiconductors interact with defects in …
High-Performance MoS2 Complementary Inverter Prepared by Oxygen Plasma Doping
S Wang, X Zeng, Y Zhou, J Lu, Y Hu… - ACS Applied …, 2022 - ACS Publications
Two-dimensional transition-metal chalcogenide has become one of the most promising
materials for miniaturization beyond Moore's law due to its atomic-level thickness and …
materials for miniaturization beyond Moore's law due to its atomic-level thickness and …
Mechanism of Fermi Level Pinning for Metal Contacts on Molybdenum Dichalcogenide
The high contact resistance of transition metal dichalcogenide (TMD)-based devices is
receiving considerable attention due to its limitation on electronic performance. The …
receiving considerable attention due to its limitation on electronic performance. The …
Single-material MoS2 thermoelectric junction enabled by substrate engineering
To realize a thermoelectric power generator, typically, a junction between two materials with
different Seebeck coefficients needs to be fabricated. Such differences in Seebeck …
different Seebeck coefficients needs to be fabricated. Such differences in Seebeck …
Reliable wafer-scale integration of two-dimensional materials and metal electrodes with van der Waals contacts
X Zhang, C Huang, Z Li, J Fu, J Tian, Z Ouyang… - Nature …, 2024 - nature.com
Since the first report on single-layer MoS2 based transistor, rapid progress has been
achieved in two-dimensional (2D) material-based atomically thin electronics, providing an …
achieved in two-dimensional (2D) material-based atomically thin electronics, providing an …
Self‐Expansion Based Multi‐Patterning for 2D Materials Fabrication beyond the Lithographical Limit
PS Borhade, T Chen, DR Chen, YX Chen, YC Yao… - Small, 2024 - Wiley Online Library
Abstract Two‐dimensional (2D) materials are promising successors for silicon transistor
channels in ultimately scaled devices, necessitating significant research efforts to study their …
channels in ultimately scaled devices, necessitating significant research efforts to study their …
Direct Assessment of Defective Regions in Monolayer MoS2 Field-Effect Transistors through In Situ Scanning Probe Microscopy Measurements
Implementing two-dimensional materials in field-effect transistors (FETs) offers the
opportunity to continue the scaling trend in the complementary metal-oxide-semiconductor …
opportunity to continue the scaling trend in the complementary metal-oxide-semiconductor …
Ambipolar MoS2 Field Effect Transistors with Negative Photoconductivity and High Responsivity Using an Ultrathin Epitaxial Ferroelectric Gate
Ferroelectric field effect transistors (FeFETs), characterized by their low power consumption
and polarization effect, can be employed in photodetectors based on 2D materials. In this …
and polarization effect, can be employed in photodetectors based on 2D materials. In this …
Two‐Dimensional Heterostructure Complementary Logic Enabled by Optical Writing
Integrated logic circuits using atomically thin, two‐dimensional (2D) materials offer several
potential advantages compared to established silicon technologies such as increased …
potential advantages compared to established silicon technologies such as increased …