Challenges and opportunities for high-power and high-frequency AlGaN/GaN high-electron-mobility transistor (HEMT) applications: A review
The emergence of gallium nitride high-electron-mobility transistor (GaN HEMT) devices has
the potential to deliver high power and high frequency with performances surpassing …
the potential to deliver high power and high frequency with performances surpassing …
Recent advances in tactile sensory systems: Mechanisms, fabrication, and applications
Flexible electronics is a cutting-edge field that has paved the way for artificial tactile systems
that mimic biological functions of sensing mechanical stimuli. These systems have an …
that mimic biological functions of sensing mechanical stimuli. These systems have an …
Investigation of thermal efficiency of recessed Γ gate over Γ gate, T gate and rectangular gate AlGaN/GaN HEMT on BGO substrate
High electron mobility transistors (HEMTs) based on a wider bandgap AlGaN channel prove
more efficient for high-voltage operation. The significant advantages of AlGaN channel …
more efficient for high-voltage operation. The significant advantages of AlGaN channel …
[HTML][HTML] Spectroscopic Ellipsometry and Correlated Studies of AlGaN-GaN HEMTs Prepared by MOCVD
A series of AlGaN/GaN high-electron-mobility transistor (HEMT) structures, with an AlN thin
buffer, GaN thick layer and Al0. 25Ga0. 75N layer (13–104 nm thick), is prepared by metal …
buffer, GaN thick layer and Al0. 25Ga0. 75N layer (13–104 nm thick), is prepared by metal …
Dynamic piezotronic effect modulated AlGaN/GaN HEMTs with HfZrOx gate dielectric
X Cui, K Ji, L Liu, W Sha, B Wang, N Xu, Q Hua… - Materials Today …, 2022 - Elsevier
High electron mobility transistors (HEMTs) based on AlGaN/GaN heterojunctions show
promising applications in high-performance power electronics. Having to face the limited …
promising applications in high-performance power electronics. Having to face the limited …
Exploration of a micron and mesoscale steps/slots composite manufacturing technology based on thin-film compensation
L Huang, J Yuan, B Yu - Ceramics International, 2022 - Elsevier
The geometrical characteristic of micron and mesoscale parts/structures is within 0.01–10
mm. However, it is challenging to ensure machining accuracy by using traditional methods …
mm. However, it is challenging to ensure machining accuracy by using traditional methods …