The drift-diffusion mechanism, the interband Zener tunneling theory, and the trap assisted
tunneling model are combined to reveal the transport properties in a multicorrelated system …

Abrupt heterojunction bipolar transistors (HBTs) show interfaces where discontinuities in the
energy levels appear. Currents through these interfaces are controlled by tunneling and …

The DC characteristics of InP-InGaAs and InAlAs-InGaAs HBT's with abrupt emitter-base
junctions are studied using a thermionic-field emission boundary-condition model. The …

The fabrication and characterization of GaN/Al0. 1Ga0. 9N visible‐blind ultraviolet double
heterojunction phototransistors (DHPTs), grown by low‐pressure metal organic chemical …

We have examined the theory of optothermionic refrigeration combining the ideas of laser
cooling and thermionic cooling [Mal'shukov and Chao, Phys. Rev. Lett. 86, 5570 (2001)] and …

Numerical modelling shows that the separation of the quasi-Fermi potentials in the lower
bandgap region of a double-heterostructure may be less than the terminal voltage, resulting …

Carbon-doped GaInP/GaAs heterojunction bipolar transistors (HBT's) and heterostructure-
emitter bipolar transistors (HEBT's) grown by MOCVD were fabricated. Experimental …

Mechanism of resistance switching in heterostructure Au/LaMnO 3/SrNb 0.01 Ti 0.99 O 3
was investigated. In Au/LaMnO 3/SrNb 0.01 Ti 0.99 O 3 devices the LaMnO 3 films were …

A simple one‐speed solution to the Boltzmann equation is used to evaluate the mobility and
diffusion coefficient for carriers in forward‐biased semiconductor barriers. The analysis …

Resistive memories based on the resistive switching effect have promising application in the
ultimate nonvolatile data memory field. This brief review focuses on the resistive switching …