With its remarkable electro-thermal properties such as the highest known thermal
conductivity (~ 22 W cm− 1 bold dot K− 1 at RT of any material, high hole mobility (> 2000 …

Field-effect transistors made of wide-bandgap semiconductors can operate at high voltages,
temperatures and frequencies with low energy losses, and are important for power and high …

We fabricated inversion channel diamond metal-oxide-semiconductor field-effect transistors
(MOSFETs) with normally off characteristics. At present, Si MOSFETs and insulated gate …

Diamond is known as the ultimate semiconductor material for electric devices with excellent
properties such as an ultra-wide bandgap (5.47 eV), high carrier mobility (electron mobility …

Diamond has unique physical properties, which show great promise for applications in the
next generation power devices. Hydrogen-terminated (CH) diamond metal-oxide …

Although several high-k insulators have been deposited on the diamond for metal-insulator-
semiconductor field effect transistors (MISFETs) fabrication, the k values and current output …

Diamond is a wide bandgap semiconductor that can work at high temperatures and resist
very high electric fields. It endures harsh environments through its physical stability and …

We report the first attempt of the diamond MOSFETs with MoO 3 dielectric directly deposited
on H-diamond surface preserving atmospheric-adsorbate-induced 2DHG. The transistors …

AC–Si bonded SiO 2/diamond interface is formed under a SiO 2 mask during the selective
diamond growth at a high temperature in a H 2 atmosphere including methane (5%). A few …

Enhancement-mode (E-mode) hydrogenated diamond (H-diamond) metal-oxide-
semiconductor field-effect transistors (MOSFETs) are fabricated with an Y 2 O 3 oxide …