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US9559198B2 - Semiconductor device and method of manufacture therefor - Google Patents
US9559198B2 - Semiconductor device and method of manufacture therefor - Google Patents …

(57) ABSTRACT A MOSFET device structure is formed on a semiconductor wafer. The
structure includes an array of plurality of MOS gate trenches and self-aligned p+ contact …

A bi-directional trench field effect power transistor. A layer stack extends over the top surface
of the substrate, in which vertical trenches are present. An electrical path can be selectively …

Semiconductor memory devices are provided. A semicon ductor memory device includes an
isolation layer in a first trench and a first gate electrode portion on the isolation layer. The …

This invention discloses a semiconductor power device formed in a semiconductor
Substrate comprises a highly doped region near a top surface of the semiconductor Sub …

(57) ABSTRACT A semiconductor device includes a semiconductor region with a charge
balance region on a junction blocking region, the junction blocking region having a lower …

257/140 2013/0214365 AL 8/2013 Schlarmann et al. 2013/0249602 A1 9/2013 Mauder et
al. 2013/0344667 AL 12/2013 Qin et al. 2014/0009212 A1 1/2014 Altunkilic et al …

A packaged unidirectional power transistor comprises a package with a number of pins
which provide a voltage and/or current connection between the outside and the inside …

The present embodiments provide a region of a semicon ductor device comprising a
plurality of power transistor cells configured as trench MOSFETs in a semiconductor sub …