This manuscript demonstrates the performance comparison of vertically stacked nanosheet FET with various high-k materials in gate stack (GS) configuration. As the high-k dielectric …
NA Kumari, SR Karumuri, J Ajayan… - IEEE …, 2024 - ieeexplore.ieee.org
This paper delves into the burgeoning realm of CombFETs, offering a comprehensive analysis of their structural design, simulation methodologies, and performance …
C Yalung, W Yamwong, D Tantraviwat - IEEE Access, 2024 - ieeexplore.ieee.org
Despite advancements in mitigating the short channel effect using high-k materials, multi- gate structures, and silicon-germanium (SiGe) alloys in three-dimensional FinFETs …
G Jain, RS Sawhney, R Kumar - Physica Scripta, 2024 - iopscience.iop.org
The stacked nanosheet field-effect transistors (SNS-FETs) are potential contenders for sub-7 nm technology. Device miniaturization leads to a larger off-state current and a higher …