Benchmarking of multi-bridge-channel FETs toward analog and mixed-mode circuit applications

VB Sreenivasulu, AK Neelam, AK Panigrahy… - IEEE …, 2024 - ieeexplore.ieee.org
In this study, for the very first time developing of n-and p-type 3-D single-channel (SC)
FinFET and gate-all-around (GAA) Multi-Bridge-Channel FETs (MBCFET) like nanowire FET …

Gate stack analysis of nanosheet FET for analog and digital circuit applications

NA Kumari, V Vijayvargiya, AK Upadhyay… - ECS Journal of Solid …, 2023 - iopscience.iop.org
This manuscript demonstrates the performance comparison of vertically stacked nanosheet
FET with various high-k materials in gate stack (GS) configuration. As the high-k dielectric …

Design and Analysis of dual-k spacer CombFET for Digital and Synaptic Applications

NA Kumari, SR Karumuri, J Ajayan… - IEEE …, 2024 - ieeexplore.ieee.org
This paper delves into the burgeoning realm of CombFETs, offering a comprehensive
analysis of their structural design, simulation methodologies, and performance …

Optimization of Multi-fins FinFET Implemented on SOI Wafer Based on SiGe and Gaussian Process Regression

C Yalung, W Yamwong, D Tantraviwat - IEEE Access, 2024 - ieeexplore.ieee.org
Despite advancements in mitigating the short channel effect using high-k materials, multi-
gate structures, and silicon-germanium (SiGe) alloys in three-dimensional FinFETs …

Investigation of spacer-engineered stacked nanosheet tunnel FET with varying design attributes

G Jain, RS Sawhney, R Kumar - Physica Scripta, 2024 - iopscience.iop.org
The stacked nanosheet field-effect transistors (SNS-FETs) are potential contenders for sub-7
nm technology. Device miniaturization leads to a larger off-state current and a higher …