Harnessing the Metal–Insulator Transition of VO2 in Neuromorphic Computing

P Schofield, A Bradicich, RM Gurrola… - Advanced …, 2023 - Wiley Online Library
Future‐generation neuromorphic computing seeks to overcome the limitations of von
Neumann architectures by colocating logic and memory functions, thereby emulating the …

Recent progress in vanadium dioxide: The multi-stimuli responsive material and its applications

S Bhupathi, S Wang, Y Ke, Y Long - Materials Science and Engineering: R …, 2023 - Elsevier
The reversible phase transition in vanadium dioxide (VO 2) with light, heat, electric,
magnetic, and mechanical stimuli is the enabling concept to function as a smart material. It is …

CMOS-compatible electrochemical synaptic transistor arrays for deep learning accelerators

J Cui, F An, J Qian, Y Wu, LL Sloan, S Pidaparthy… - Nature …, 2023 - nature.com
In-memory computing architectures based on memristive crossbar arrays could offer higher
computing efficiency than traditional hardware in deep learning applications. However, the …

Complex oxides for brain‐inspired computing: A review

TJ Park, S Deng, S Manna, ANMN Islam… - Advanced …, 2023 - Wiley Online Library
The fields of brain‐inspired computing, robotics, and, more broadly, artificial intelligence (AI)
seek to implement knowledge gleaned from the natural world into human‐designed …

Ionic Sieving Through One‐Atom‐Thick 2D Material Enables Analog Nonvolatile Memory for Neuromorphic Computing

RD Nikam, J Lee, W Choi, W Banerjee, M Kwak… - Small, 2021 - Wiley Online Library
The first report on ion transport through atomic sieves of atomically thin 2D material is
provided to solve critical limitations of electrochemical random‐access memory (ECRAM) …

[HTML][HTML] Electrolyte-gated neuromorphic transistors for brain-like dynamic computing

Y He, S Jiang, C Chen, C Wan, Y Shi… - Journal of Applied …, 2021 - pubs.aip.org
In recent years, the rapid increase in the data volume to be processed has led to urgent
requirements for highly efficient computing paradigms. Brain-like computing that mimics the …

Accurate Weight Update in an Electrochemical Random‐Access Memory Based Cross‐Point Array Using Channel‐High Half‐Bias Scheme for Deep Learning …

S Kim, J Son, H Kwak, S Kim - Advanced Electronic Materials, 2023 - Wiley Online Library
Recently cross‐point arrays of synaptic memory devices have been intensively studied to
accelerate deep neural network computations. Among various synaptic devices …

Nitrogen doping effect on InGaZnO-based artificial synapse for implementing reservoir computing and SVHN dataset pattern recognition

C Mahata, H So, D Ju, M Ismail, S Kim, CC Hsu, K Park… - Nano Energy, 2024 - Elsevier
This work focused on plasma-induced nitrogen-doped indium gallium zinc oxide (InGaZnO:
N) based resistive switching devices. Nitrogen atoms in the InGaZnO: N can reduce the …

Reversal of Anomalous Hall Effect and Octahedral Tilting in SrRuO3 Thin Films via Hydrogen Spillover

H Han, H Zhou, C Guillemard, M Valvidares… - Advanced …, 2023 - Wiley Online Library
The perovskite SrRuO3 (SRO) is a strongly correlated oxide whose physical and structural
properties are strongly intertwined. Notably, SRO is an itinerant ferromagnet that exhibits a …

Piezo strain–controlled phase transition in single-crystalline Mott switches for threshold-manipulated leaky integrate-and-fire neurons

DK Lee, S Lee, H Sim, Y Park, SY Choi, J Son - Science Advances, 2024 - science.org
Electrical manipulation of the metal-insulator transition (MIT) in quantum materials has
attracted considerable attention toward the development of ultracompact neuromorphic …