Synthesis and applications of III–V nanowires
E Barrigón, M Heurlin, Z Bi, B Monemar… - Chemical …, 2019 - ACS Publications
Low-dimensional semiconductor materials structures, where nanowires are needle-like one-
dimensional examples, have developed into one of the most intensely studied fields of …
dimensional examples, have developed into one of the most intensely studied fields of …
III-nitride nanostructures: Emerging applications for Micro-LEDs, ultraviolet photonics, quantum optoelectronics, and artificial photosynthesis
In this review article, we discuss the molecular beam epitaxy and basic structural, electronic,
optical, excitonic, chemical and catalytic properties of III-nitride nanostructures, including …
optical, excitonic, chemical and catalytic properties of III-nitride nanostructures, including …
Wafer-scale transfer route for top–down III-nitride nanowire LED arrays based on the femtosecond laser lift-off technique
The integration of gallium nitride (GaN) nanowire light-emitting diodes (nanoLEDs) on
flexible substrates offers opportunities for applications beyond rigid solid-state lighting (eg …
flexible substrates offers opportunities for applications beyond rigid solid-state lighting (eg …
Progress and challenges of InGaN/GaN-based core–shell microrod LEDs
J Meier, G Bacher - Materials, 2022 - mdpi.com
LEDs based on planar InGaN/GaN heterostructures define an important standard for solid-
state lighting. However, one drawback is the polarization field of the wurtzite heterostructure …
state lighting. However, one drawback is the polarization field of the wurtzite heterostructure …
UV-A to UV-B electroluminescence of core-shell GaN/AlGaN wire heterostructures
Core-shell GaN/AlGaN multiple quantum wells (MQWs) embedded in ap–n junction are
integrated on the upper part of GaN microwires grown by silane-assisted metal organic …
integrated on the upper part of GaN microwires grown by silane-assisted metal organic …
UV Emission from GaN Wires with m-Plane Core–Shell GaN/AlGaN Multiple Quantum Wells
The present work reports high-quality nonpolar GaN/Al0. 6Ga0. 4N multiple quantum wells
(MQWs) grown in core–shell geometry by metal–organic vapor-phase epitaxy on the m …
(MQWs) grown in core–shell geometry by metal–organic vapor-phase epitaxy on the m …
Micrometer scale InGaN green light emitting diodes with ultra-stable operation
We report on the demonstration of InGaN photonic nanocrystal light emitting diodes (LEDs),
which operate in the green wavelength (∼ 548 nm). The devices are designed to operate at …
which operate in the green wavelength (∼ 548 nm). The devices are designed to operate at …
Morphology control and crystalline quality of p-type GaN shells grown on coaxial GaInN/GaN multiple quantum shell nanowires
W Lu, N Nakayama, K Ito, S Katsuro… - … Applied Materials & …, 2021 - ACS Publications
The morphology and crystalline quality of p-GaN shells on coaxial GaInN/GaN multiple
quantum shell (MQS) nanowires (NWs) were investigated using metal–organic chemical …
quantum shell (MQS) nanowires (NWs) were investigated using metal–organic chemical …
Photoelectrochemical water-splitting using GaN pyramidal dots and their long-term stability in the two-electrode configuration
We report the high solar-to-hydrogen conversion efficiency (STH) and long-term stability of a
photoelectrochemical water-splitting (PEC-WS) system using GaN pyramidal dots (PDs) …
photoelectrochemical water-splitting (PEC-WS) system using GaN pyramidal dots (PDs) …
Stretchable transparent light-emitting diodes based on InGaN/GaN quantum well microwires and Carbon nanotube films
We propose and demonstrate both flexible and stretchable blue light-emitting diodes based
on core/shell InGaN/GaN quantum well microwires embedded in polydimethylsiloxane …
on core/shell InGaN/GaN quantum well microwires embedded in polydimethylsiloxane …