This paper reviews the device physics and technology of optoelectronic devices based on
semiconductors of the GaN family, operating in the spectral regions from deep UV to …

III-nitride nanostructures have recently emerged as promising materials for new
intersubband (ISB) devices in a wide variety of applications. These ISB technologies rely on …

The high-frequency operation of a mid-infrared interband cascade system that consists of a
type-I interband cascade laser and an uncooled interband cascade infrared photodetector …

This paper reviews recent progress toward intersubband (ISB) devices based on III-nitride
quantum wells (QWs). First, we discuss the specific features of ISB active region design …

We demonstrate terahertz intersubband absorptions at frequencies of 2.1 THz (λ≈ 143 μ m)
and 4.2 THz (λ≈ 70 μ m) in nitride-based semiconductor quantum wells. The structures …

Quantum cascade detectors (QCDs) are intersubband devices that are suited for high-
performance photodetection of mid-infrared light. In this comprehensive review, the state of …

Beginning from the 1990s, an ever-lasting interest in the terahertz (THz) spectroscopy and
THz instruments has produced wide progress in the development of high-speed THz …

We report on ultrafast GaN/AlGaN waveguide quantum cascade detectors with a peak
detection wavelength of 1.5 μm. Mesa devices with a size of 7× 7 and 10× 10 μm 2 have …

A two-color GaN-based quantum cascade detector is demonstrated. This photodetector
operates simultaneously at a peak wavelength of 1.7 and 1 μm at room temperature without …

This paper reports on the demonstration of quantum cascade detectors (QCDs) based on
ZnO/ZnMgO quantum wells (QWs) grown by molecular beam epitaxy on an m-plane ZnO …