A review on morphotropic phase boundary in fluorite-structure hafnia towards DRAM technology

M Jung, V Gaddam, S Jeon - Nano Convergence, 2022 - Springer
In the present hyper-scaling era, memory technology is advancing owing to the demand for
high-performance computing and storage devices. As a result, continuous work on …

Titanium dioxide thin films by atomic layer deposition: A review

JP Niemelä, G Marin, M Karppinen - Semiconductor science and …, 2017 - iopscience.iop.org
Within its rich phase diagram titanium dioxide is a truly multifunctional material with a
property palette that has been shown to span from dielectric to transparent-conducting …

Insertion of HfO2 Seed/Dielectric Layer to the Ferroelectric HZO Films for Heightened Remanent Polarization in MFM Capacitors

V Gaddam, D Das, S Jeon - IEEE Transactions on Electron …, 2020 - ieeexplore.ieee.org
This article highlights the role of HfO 2 seed/dielectric insertion layers on the ferroelectric
properties of hafnium zirconium oxide (HZO)-based metal-ferroelectric-metal (MFM) …

Future of dynamic random-access memory as main memory

SK Kim, M Popovici - MRS Bulletin, 2018 - cambridge.org
Dynamic random-access memory (DRAM) is the main memory in most current computers.
The excellent scalability of DRAM has significantly contributed to the development of …

Recent advances in the understanding of high-k dielectric materials deposited by atomic layer deposition for dynamic random-access memory capacitor applications

W Jeon - Journal of Materials Research, 2020 - cambridge.org
Capacitors represent the largest obstacle to dynamic random-access memory (DRAM)
technology evolution because the capacitor properties govern the overall operational …

Novel Approach to High κ (∼59) and Low EOT (∼3.8 Å) near the Morphotrophic Phase Boundary with AFE/FE (ZrO2/HZO) Bilayer Heterostructures and High …

V Gaddam, G Kim, T Kim, M Jung, C Kim… - ACS Applied Materials …, 2022 - ACS Publications
We present herewith a novel approach of equally thick AFE/FE (ZrO2/HZO) bilayer stack
heterostructure films for achieving an equivalent oxide thickness (EOT) of 4.1 Å with a …

Morphotropic Phase Boundary of Hf1–xZrxO2 Thin Films for Dynamic Random Access Memories

MH Park, YH Lee, HJ Kim, YJ Kim, T Moon… - … applied materials & …, 2018 - ACS Publications
The utilization of the morphotropic phase boundary (MPB) between the newly found
ferroelectric orthorhombic phase and the tetragonal phase in an HfO2–ZrO2 solid solution is …

Reliable high work-function molybdenum dioxide synthesis via template-effect-utilizing atomic layer deposition for next-generation electrode applications

YW Kim, AJ Lee, DH Han, DC Lee, JH Hwang… - Journal of Materials …, 2022 - pubs.rsc.org
MoO2, a conductive metal oxide, has attracted considerable attention as an electrode
material in metal–insulator–metal (MIM) capacitors owing to its crystallinity and high work …

Emerging fluorite-structured antiferroelectrics and their semiconductor applications

GH Park, DH Lee, H Choi, T Kwon… - ACS Applied …, 2023 - ACS Publications
The ferroelectric properties of fluorite-structured oxides have attracted significant attention
from researchers because of their potential applications in nonvolatile memory devices …

Field‐Induced Ferroelectric Hf1‐xZrxO2 Thin Films for High‐k Dynamic Random Access Memory

SD Hyun, HW Park, MH Park, YH Lee… - Advanced Electronic …, 2020 - Wiley Online Library
The field‐induced ferroelectric Hf1–xZrxO2 (FFE–HZO) thin film is investigated for use as the
capacitive layer in the future dynamic random access memory (DRAM). Although the …