Wurtzite and fluorite ferroelectric materials for electronic memory
Ferroelectric materials, the charge equivalent of magnets, have been the subject of
continued research interest since their discovery more than 100 years ago. The …
continued research interest since their discovery more than 100 years ago. The …
Dawn of nitride ferroelectric semiconductors: from materials to devices
III-nitride semiconductors are promising optoelectronic and electronic materials and have
been extensively investigated in the past decades. New functionalities, such as …
been extensively investigated in the past decades. New functionalities, such as …
Role of Defects in the Breakdown Phenomenon of Al1–xScxN: From Ferroelectric to Filamentary Resistive Switching
Aluminum scandium nitride (Al1–x Sc x N), with its large remanent polarization, is an
attractive material for high-density ferroelectric random-access memories. However, the …
attractive material for high-density ferroelectric random-access memories. However, the …
[HTML][HTML] A Landau–Devonshire analysis of strain effects on ferroelectric Al1− xScxN
We present a thermodynamic analysis of the recently discovered nitride ferroelectric
materials using the classic Landau–Devonshire approach. Electrostrictive and dielectric …
materials using the classic Landau–Devonshire approach. Electrostrictive and dielectric …
Nanoscale compositional segregation in epitaxial AlScN on Si (111)
We report the growth of epitaxial wurtzite AlScN thin films on Si (111) substrates with a wide
range of Sc concentrations using ultra-high vacuum reactive sputtering. Sc alloying in AlN …
range of Sc concentrations using ultra-high vacuum reactive sputtering. Sc alloying in AlN …
Impact of operation voltage and NH 3 annealing on the fatigue characteristics of ferroelectric AlScN thin films grown by sputtering
This work investigates the impact of the magnitude of cycling voltage on the fatigue
characteristics of 40 nm-thick AlScN ferroelectric thin film. The fatigue rate and the …
characteristics of 40 nm-thick AlScN ferroelectric thin film. The fatigue rate and the …
Effect of Substrate-RF on Sub-200 nm Al0.7Sc0.3N Thin Films
Sc-doped aluminum nitride is emerging as a new piezoelectric material which can substitute
undoped aluminum nitride (AlN) in radio-frequency MEMS applications, thanks to its …
undoped aluminum nitride (AlN) in radio-frequency MEMS applications, thanks to its …
Towards low-temperature processing of lead-free BZT thin films for high-temperature energy storage performance
MD Nguyen - Journal of Alloys and Compounds, 2023 - Elsevier
In this work, lead-free BaZr 0.35 Ti 0.65 O 3 (BZT) thin films were grown on silicon by using
pulsed laser deposition. The phase structures of the BZT thin films were controlled via the …
pulsed laser deposition. The phase structures of the BZT thin films were controlled via the …
Single crystal ferroelectric AlScN nanowires
Despite the considerable potential and significant promise of aluminum scandium nitride
(AlScN) ferroelectric materials for neuromorphic computing applications, challenges related …
(AlScN) ferroelectric materials for neuromorphic computing applications, challenges related …
[HTML][HTML] Lattice-matched multiple channel AlScN/GaN heterostructures
AlScN is a new wide bandgap, high-k, ferroelectric material for radio frequency (RF),
memory, and power applications. Successful integration of high-quality AlScN with GaN in …
memory, and power applications. Successful integration of high-quality AlScN with GaN in …