Physical, chemical, and in vitro toxicological characterization of nanoparticles in chemical mechanical planarization suspensions used in the semiconductor industry …

D Speed, P Westerhoff, R Sierra-Alvarez… - Environmental …, 2015 - pubs.rsc.org
This tutorial review focuses on aqueous slurries of dispersed engineered nanoparticles
(ENPs) used in chemical mechanical planarization (CMP) for polishing wafers during …

The influence of pH and H2O2 on surface quality and material removal rate during W-CMP

L Wang, F Peng, H Chen, W Hang, C Yu… - … International Journal of …, 2023 - Springer
In the chemical mechanical polishing (CMP) process, chemical action is generally
determined by pH regulator and oxidant in the polishing slurry. In this paper, tungsten (W) …

Effects of pH Values and H2O2 Concentrations on the Chemical Enhanced Shear Dilatancy Polishing of Tungsten

L Xu, L Wang, H Chen, X Wang, F Chen, B Lyu… - Micromachines, 2022 - mdpi.com
In order to obtain tungsten with great surface qualities and high polishing efficiency, a novel
method of chemical enhanced shear dilatancy polishing (C-SDP) was proposed. The effects …

Tungsten passivation layer (WO3) formation mechanisms during chemical mechanical planarization in the presence of oxidizers

MK Poddar, P Jalalzai, S Sahir, NP Yerriboina… - Applied Surface …, 2021 - Elsevier
Abstract Effects of single and mixed oxidants of Fe (NO 3) 3 and H 2 O 2 containing acidic
silica slurries were studied to investigate the mechanism of tungsten (W) chemical …

Environmental aspects of planarization processes

DE Speed - Advances in chemical mechanical planarization (CMP), 2022 - Elsevier
This chapter describes the occurrence, behavior, and treatment of wastewater that is
produced by the Chemical Mechanical Planarization (CMP) process when it is used to …

Effect of iron (III) nitrate concentration on tungsten chemical-mechanical-planarization performance

JH Lim, JH Park, JG Park - Applied surface science, 2013 - Elsevier
Investigating the catalytic effect of Fe (NO 3) 3 on the performance of tungsten (W) chemical
mechanical planarization in H 2 O 2-based acidic slurries, we found that the trend of the …

Nanocatalyst-induced hydroxyl radical (·OH) slurry for tungsten CMP for next-generation semiconductor processing

MK Poddar, HY Ryu, NP Yerriboina, YA Jeong… - Journal of Materials …, 2020 - Springer
Chemical mechanical polishing (CMP) is one of the important steps that involves during
fabrication of semiconductor devices. This research highlights the importance of tungsten …

Biomachining properties of various metals by microorganisms

F Ma, H Huang, C Cui - Journal of Materials Processing Technology, 2020 - Elsevier
The biomachining properties of five pure metals (Cu, Co, Fe, Sn, and W) and four sintered
components made from binary powder mixtures (Cu-Co, Cu-Fe, Cu-Sn, and Cu-W) were …

Recovery and reuse of magnetic silica-coated iron oxide particles for eco-friendly chemical mechanical planarization

J Seo, JU Hur, S Kim, YS Kim, YH Kim, K Bae… - Colloids and Surfaces A …, 2024 - Elsevier
Chemical mechanical planarization (CMP), a crucial process in semiconductor
manufacturing, raises environmental concerns due to increased waste generation …

A material removal rate model for tungsten chemical mechanical planarization

Q Xu, L Chen, J Liu, H Cao - ECS Journal of Solid State Science …, 2019 - iopscience.iop.org
In this work, a new material removal rate (MRR) model for tungsten chemical mechanical
planarization (CMP) is proposed to provide some fundamental insights of slurry components …