Metal oxide thin‐film transistors have been continuously researched and mass‐produced in
the display industry. However, their phototransistors are still in their infancy. In particular …

The technological ability to detect a wide spectrum range of illuminated visible-to-NIR is
substantially improved for an amorphous metal oxide semiconductor, indium gallium zinc …

Bio‐inspired neuromorphic vision sensors, integrating optical sensing, and processing
functions have attracted significant attention for developing future low‐power and high …

The electrical characteristics of a thin film transistor (TFT) can be tuned by using an
asymmetric work function source–drain (S–D) electrode. However, to realize the effect of this …

Atomic layer deposition (ALD) is a promising deposition method to precisely control the
thickness and metal composition of oxide semiconductors, making them attractive materials …

Field‐effect transistors (FETs) with nanoscale channels have emerged as excellent
platforms for constructing high‐sensitivity biosensors. However, in typical FET‐based …

Ultraviolet to infrared broadband spectral detection capability is a technological challenge
for sensing materials being developed for high-performance photodetection. In this work, we …

The indium–gallium–zinc-oxide (IGZO) transistor has consistently encountered reliability
issues and has intrinsic material limitations that limit its electrical performance. In this study …

In this article, mechanisms of extremely low OFF-state current and abnormal negative bias
stress (NBS) are systematically investigated by the varying process that contains various gas …

We propose that the post-deposition oxidation of the IGZO surface is essential for improving
the interface quality, with Al2O3 prepared by atomic layer deposition (ALD) employing a …