Structural and electronic properties of epitaxial graphene on SiC (0 0 0 1): a review of growth, characterization, transfer doping and hydrogen intercalation
Graphene, a monoatomic layer of graphite, hosts a two-dimensional electron gas system
with large electron mobilities which makes it a prospective candidate for future carbon …
with large electron mobilities which makes it a prospective candidate for future carbon …
Quasi-free-standing epitaxial graphene on SiC obtained by hydrogen intercalation
Quasi-free-standing epitaxial graphene is obtained on SiC (0001) by hydrogen intercalation.
The hydrogen moves between the (6 3× 6 3) R 30° reconstructed initial carbon layer and the …
The hydrogen moves between the (6 3× 6 3) R 30° reconstructed initial carbon layer and the …
Charge neutrality and band-gap tuning of epitaxial graphene on SiC by molecular doping
Epitaxial graphene on SiC (0001) suffers from strong intrinsic n-type doping. We
demonstrate that the excess negative charge can be fully compensated by noncovalently …
demonstrate that the excess negative charge can be fully compensated by noncovalently …
Wafer‐scale synthesis of graphene on sapphire: toward fab‐compatible graphene
The adoption of graphene in electronics, optoelectronics, and photonics is hindered by the
difficulty in obtaining high‐quality material on technologically relevant substrates, over wafer …
difficulty in obtaining high‐quality material on technologically relevant substrates, over wafer …
Influence of graphene curvature on hydrogen adsorption: toward hydrogen storage devices
The ability of atomic hydrogen to chemisorb on graphene makes the latter a promising
material for hydrogen storage. On the basis of scanning tunneling microscopy techniques …
material for hydrogen storage. On the basis of scanning tunneling microscopy techniques …
Low temperature growth of epitaxial graphene on SiC induced by carbon evaporation
A Al-Temimy, C Riedl, U Starke - Applied Physics Letters, 2009 - pubs.aip.org
Low temperature growth of epitaxial graphene on SiC is facilitated by carbon evaporation
under ultrahigh vacuum (UHV) conditions. By counteracting the need for complete Si …
under ultrahigh vacuum (UHV) conditions. By counteracting the need for complete Si …
[HTML][HTML] Rapid and catalyst-free van der Waals epitaxy of graphene on hexagonal boron nitride
Recently, hexagonal boron nitride (h-BN) has been shown to act as an ideal substrate to
graphene by greatly improving the material transport properties thanks to its atomically flat …
graphene by greatly improving the material transport properties thanks to its atomically flat …
Image analysis development for optimization of 4H–SiC trench recovery treatment by combination of gas etching and sacrificial oxidation approaches
M Barcellona, P Badalà, M Boscaglia… - Materials Science in …, 2024 - Elsevier
Abstract Silicon Carbide (SiC) is one of the most promising new-generation semiconductor
material for high-power and high-efficiency electronic devices overcoming in some respects …
material for high-power and high-efficiency electronic devices overcoming in some respects …
Single-crystal silicon carbide: A biocompatible and hemocompatible semiconductor for advanced biomedical applications
Crystalline silicon carbide (SiC) and silicon (Si) biocompatibility was evaluated in vitro by
directly culturing three skin and connective tissue cell lines, two immortalized neural cell …
directly culturing three skin and connective tissue cell lines, two immortalized neural cell …
Engineering the electronic structure of epitaxial graphene by transfer doping and atomic intercalation
Homogeneous graphene layers can be grown epitaxially on SiC (0001), promising scalable
graphene technology. However, covalent bonds at the SiC–graphene interface induce …
graphene technology. However, covalent bonds at the SiC–graphene interface induce …