An InGaP/GaAs HBT power amplifier for 4.9–5.9 GHz wireless-LAN applications
L Huang, Z Zhang, S Li, G Zhang - 2014 12th IEEE …, 2014 - ieeexplore.ieee.org
This paper presents an InGaP/GaAs HBT power amplifier (PA) for mobile terminals used in
4.9-5.9 GHz broadband wireless applications. The PA consists of a 3-stage structure for high …
4.9-5.9 GHz broadband wireless applications. The PA consists of a 3-stage structure for high …
A 28-GHz band highly linear power amplifier with novel adaptive bias circuit for cascode MOSFET in 56-nm SOI CMOS
H Sato, M Yanagisawa… - … Conference on Electron …, 2017 - ieeexplore.ieee.org
This paper presents a highly linear 28-GHz band SOI CMOS power amplifier with an
adaptive bias circuit for cascode MOSFET for next generation wireless communication. The …
adaptive bias circuit for cascode MOSFET for next generation wireless communication. The …
High frequency CMOS amplifier with improved linearity
M Tanseer Ali, R Wu, L Mao… - IET Circuits, Devices …, 2014 - Wiley Online Library
In this paper, a novel amplifier linearisation technique based on the negative impedance
compensation is presented. As demonstrated by using Volterra model, the proposed …
compensation is presented. As demonstrated by using Volterra model, the proposed …
Compact high‐linearity, high‐efficiency complementary metal–oxide–semiconductor power amplifier with post‐distortion lineariser for wireless local area network and …
KC Lin, HK Chiou, CL Ko, PC Wu… - IET Microwaves …, 2016 - Wiley Online Library
This study proposes a post‐distortion linearisation technique for 5 and 60 GHz
complementary metal–oxide–semiconductor (CMOS) power amplifiers (PAs). The technique …
complementary metal–oxide–semiconductor (CMOS) power amplifiers (PAs). The technique …
A 5 GHz linear laser diode driver for ROF transmission systems
Y Chen, Y Zheng, L Zhang - Microwave and Optical …, 2015 - Wiley Online Library
The design of a 42 mA laser diode (LD) driver for 5 GHz radio‐over‐fiber transmission
systems is presented in this article. The proposed linear LD driver adopted a single‐ended …
systems is presented in this article. The proposed linear LD driver adopted a single‐ended …
Paralel diyot doğrusallaştırıcılı 2.4 GHz güç yükselteci tasarımı
B Şenel - Dicle Üniversitesi Mühendislik Fakültesi Mühendislik …, 2018 - dergipark.org.tr
Bu çalışmada öncelikle 2.4 GHz frekansında ATF501p8 pseudomorfik yüksek elektron
hareketli transistör (pYEHT) kullanılarak yüksek Çevrim Güç Kazancı (G), Güç Ekli Verim …
hareketli transistör (pYEHT) kullanılarak yüksek Çevrim Güç Kazancı (G), Güç Ekli Verim …
Design of RF amplifier with enhanced performance
In this paper, a RF CMOS amplifier is designed on the basis of a novel negative impedance
linearization technique with negative differential resistance (NDR) element. The simulation …
linearization technique with negative differential resistance (NDR) element. The simulation …