This paper presents two techniques for DC model parameter extraction for a Gallium
Arsenide (GaAs) based MEtal Semiconductor Field Effect Transistor (MESFET) device. The …

In this paper, new modeling and optimization approaches are proposed to improve the
electrical behavior of the submicron Dual-Material-gate (DM) Gallium Arsenide (GaAs) …

In this paper, a novel extended-temperature current–voltage (IV) model for Gallium Nitride
(GaN) high electron mobility transistors (HEMT) devices is proposed. Revised from the …

In this paper, a novel eight-parameter empirical nonlinear current-voltage (IV) model for
gallium nitride (GaN) high electron mobility transistors (HEMTs) is presented. A hyperbolic …

This paper presents an improved model to simulate IV characteristics of submicron SiC
MESFETs, designed for microwave power applications. The proposed model adequately …

This paper presents a novel approach to exploit FPGA dynamic partial reconfiguration to
improve the fault tolerance of complex microprocessor-based systems, with no need to …

In this paper, a technique has been developed to estimate intrinsic small signal parameters
of submicron SiC MESFETs, designed for high power microwave applications. In the …

GaN High Electron Mobility Transistors (HEMTs) is a high-power device that requires
electrothermal modeling for the drain current. The accuracy of the large signal device …

Nowadays, absolute majority of circuit simulation programs contains classic Branin model of
lossless transmission lines. However, characterizing the four delays (t-TD) incorporated in …

A modified nonlinear model to predict direct-current (DC) and alternating-current (AC)
characteristics of submicron SiC metal–semiconductor field-effect transistors (MESFETs) is …