Review of self-powered solar-blind photodetectors based on Ga2O3
C Wu, F Wu, H Hu, S Wang, A Liu, D Guo - Materials Today Physics, 2022 - Elsevier
Due to the broad potential applications range in both military and civilian domains, solar-
blind photodetectors based on the ultrawide-bandgap semiconductor Ga 2 O 3, with high …
blind photodetectors based on the ultrawide-bandgap semiconductor Ga 2 O 3, with high …
Recent progress on the electronic structure, defect, and doping properties of Ga2O3
ABSTRACT Gallium oxide (Ga2O3) is an emerging wide bandgap semiconductor that has
attracted a large amount of interest due to its ultra-large bandgap of 4.8 eV, a high …
attracted a large amount of interest due to its ultra-large bandgap of 4.8 eV, a high …
Review of gallium-oxide-based solar-blind ultraviolet photodetectors
Solar-blind photodetectors are of great interest to a wide range of industrial, civil,
environmental, and biological applications. As one of the emerging ultrawide-bandgap …
environmental, and biological applications. As one of the emerging ultrawide-bandgap …
AlGaN photonics: recent advances in materials and ultraviolet devices
D Li, K Jiang, X Sun, C Guo - Advances in Optics and Photonics, 2018 - opg.optica.org
AlGaN-based materials own direct transition energy bands and wide bandgap and thus can
be used in high-efficiency ultraviolet (UV) emitters and detectors. Over the past two decades …
be used in high-efficiency ultraviolet (UV) emitters and detectors. Over the past two decades …
Review of polymorphous Ga2O3 materials and their solar-blind photodetector applications
X Hou, Y Zou, M Ding, Y Qin, Z Zhang… - Journal of Physics D …, 2020 - iopscience.iop.org
Light detection in the deep-ultraviolet (DUV) solar-blind waveband has attracted interest due
to its critical applications, especially in safety and space detection. A DUV photodetector …
to its critical applications, especially in safety and space detection. A DUV photodetector …
[HTML][HTML] Toward emerging gallium oxide semiconductors: A roadmap
Owing to the advantages of ultra-wide bandgap and rich material systems, gallium oxide (Ga
2 O 3) has emerged as a highly viable semiconductor material for new researches. This …
2 O 3) has emerged as a highly viable semiconductor material for new researches. This …
Recent progress on the effects of impurities and defects on the properties of Ga 2 O 3
Ga2O3 is attractive for power devices and solar-blind ultraviolet photodetectors due to its
ultra-wide bandgap, large breakdown field, and favorable stability. However, it is difficult to …
ultra-wide bandgap, large breakdown field, and favorable stability. However, it is difficult to …
Internal quantum efficiency of whole-composition-range AlGaN multiquantum wells
K Ban, J Yamamoto, K Takeda, K Ide… - Applied physics …, 2011 - iopscience.iop.org
We analyze the internal quantum efficiency (IQE) of whole-composition-range AlGaN
multiquantum wells (MQWs) on AlGaN with various dislocation densities (DDs) by excitation …
multiquantum wells (MQWs) on AlGaN with various dislocation densities (DDs) by excitation …
Recent advances and challenges in AlGaN-based ultra-violet light emitting diode technologies
The lighting industry undergoes a revolutionizing transformation with the introduction of III-
nitride semiconductors, and" LEDs" became a household name. The solid-state light source …
nitride semiconductors, and" LEDs" became a household name. The solid-state light source …
A high-performance ultraviolet solar-blind photodetector based on a β-Ga 2 O 3 Schottky photodiode
UV ray detection near the earth surface has become urgent due to the serious effects of UV
rays on human health, the environment and the biological evolution; therefore, the …
rays on human health, the environment and the biological evolution; therefore, the …