Compressively-strained GaSb nanowires with core-shell heterostructures
GaSb-based nanowires in a gate-all-around geometry are good candidates for binary p-type
transistors, however they require the introduction of compressive strain to enhance the …
transistors, however they require the introduction of compressive strain to enhance the …
[HTML][HTML] Double-gated ultra-thin-body GaAs-on-insulator p-FETs on Si
We demonstrated ultra-thin-body (UTB) junctionless (JL) p-type field-effect transistors
(pFETs) on Si using GaAs channels. Wafer bonding and epitaxial lift-off techniques were …
(pFETs) on Si using GaAs channels. Wafer bonding and epitaxial lift-off techniques were …
Quantum transport simulation of the two-dimensional GaSb transistors
P Wang, S Han, R Quhe - Journal of Semiconductors, 2021 - iopscience.iop.org
Owing to the high carrier mobility, two-dimensional (2D) gallium antimonite (GaSb) is a
promising channel material for field-effect transistors (FETs) in the post-silicon era. We …
promising channel material for field-effect transistors (FETs) in the post-silicon era. We …
Superconductivity and weak anti-localization in GaSb whiskers under strain
NS Liakh-Kaguy, AA Druzhinin, I Ostrovskii… - Low Temperature …, 2019 - pubs.aip.org
Strain influence on the behavior of temperature dependences of resistance was studied in
the n-type conductivity GaSb whiskers with tellurium concentration 1.7 10 18 сm–3 …
the n-type conductivity GaSb whiskers with tellurium concentration 1.7 10 18 сm–3 …
[PDF][PDF] GaSb nanowire transistors with process induced strain
E Winqvist - 2017 - lup.lub.lu.se
With the constant downscaling of Si transistors reaching its limits, other alternatives have
been actively researched the past decades. Group III-V semiconductors are excellent …
been actively researched the past decades. Group III-V semiconductors are excellent …