Review on the microstructure of ferroelectric hafnium oxides
Ferroelectric hafnium oxide is of major interest for a multitude of applications in
microelectronics, ranging from neuromorphic devices to actuators and sensors. While the …
microelectronics, ranging from neuromorphic devices to actuators and sensors. While the …
Advantages and developments of Raman spectroscopy for electroceramics
Despite being applied with success in many fields of materials science, Raman
spectroscopy is not yet determinant in the study of electroceramics. Recent experimental …
spectroscopy is not yet determinant in the study of electroceramics. Recent experimental …
Infrared Signatures for Phase Identification in Hafnium Oxide Thin Films
Phase identification in HfO2-based thin films is a prerequisite to understanding the
mechanisms stabilizing the ferroelectric phase in these materials, which hold great promise …
mechanisms stabilizing the ferroelectric phase in these materials, which hold great promise …
A Perspective on ferroelectricity in hafnium oxide: Mechanisms and considerations regarding its stability and performance
Ferroelectric hafnium oxides are poised to impact a wide range of microelectronic
applications owing to their superior thickness scaling of ferroelectric stability and …
applications owing to their superior thickness scaling of ferroelectric stability and …
Ferroelectric Orthorhombic ZrO2 Thin Films Achieved Through Nanosecond Laser Annealing
A new approach for the stabilization of the ferroelectric orthorhombic ZrO2 films is
demonstrated through nanosecond laser annealing (NLA) of as‐deposited Si/SiOx/W (14 …
demonstrated through nanosecond laser annealing (NLA) of as‐deposited Si/SiOx/W (14 …
Influence of Si-Doping on 45 nm Thick Ferroelectric ZrO2 Films
In the last decades, ferroelectricity has been discovered in Si-doped HfO2 and Hf1–x Zr x O2
thin films, and the origin of ferroelectricity is considered to be the presence of the polar Pca …
thin films, and the origin of ferroelectricity is considered to be the presence of the polar Pca …
Electrical investigation of wake-up in high endurance fatigue-free La and Y doped HZO metal–ferroelectric–metal capacitors
AM Walke, MI Popovici, K Banerjee… - … on Electron Devices, 2022 - ieeexplore.ieee.org
High endurance of 10 11 cycles is demonstrated in~ 9–10-nm stoichiometric Hafnium
Zirconate (HZO) metal–ferroelectric–metal (MFM) capacitors deposited using Cl precursors …
Zirconate (HZO) metal–ferroelectric–metal (MFM) capacitors deposited using Cl precursors …
Strain as a Global Factor in Stabilizing the Ferroelectric Properties of ZrO2
Since the discovery of ferroelectricity in doped HfO2 and ZrO2 thin films over a decade ago,
fluorite‐structured ferroelectric thin films have attracted much research attention due to their …
fluorite‐structured ferroelectric thin films have attracted much research attention due to their …
Ferroelectric ZrO 2 phases from infrared spectroscopy
We investigate ferroelectric thin films of ZrO2 experimentally and theoretically using infrared
(IR) absorption spectroscopy coupled with density functional theory (DFT) calculations. The …
(IR) absorption spectroscopy coupled with density functional theory (DFT) calculations. The …
Using Raman spectroscopy and x-ray diffraction for phase determination in ferroelectric mixed Hf1− xZrxO2-based layers
U Schroeder, R Sachdeva, PD Lomenzo, B Xu… - Journal of Applied …, 2022 - pubs.aip.org
The discovery of ferroelectric properties in the doped HfO2 and mixed Hf1− xZrxO2 systems
made precise phase determination very important. However, due to the similarities of the …
made precise phase determination very important. However, due to the similarities of the …