Sub-10 nm two-dimensional transistors: Theory and experiment
Presently Si-based field-effect transistors (FETs) are approaching their physical limit, and
further scaling their gate length down to the sub-10 nm region is becoming extremely …
further scaling their gate length down to the sub-10 nm region is becoming extremely …
Performance limit of ultrathin GaAs transistors
High-electron-mobility group III–V compounds have been regarded as a promising
successor to silicon in next-generation field-effect transistors (FETs). Gallium arsenide …
successor to silicon in next-generation field-effect transistors (FETs). Gallium arsenide …
Promising Properties of a Sub-5-nm Monolayer Transistor
Two-dimensional (2D) semiconductors have attracted tremendous interest as natural
passivation and atomically thin channels could facilitate continued transistor scaling …
passivation and atomically thin channels could facilitate continued transistor scaling …
Performance Limit of Gate-All-Around Nanowire Field-Effect Transistors: An Ab Initio Quantum Transport Simulation
The gate-all-around (GAA) Si nanowire (NW) field-effect transistor (FET) is considered one
of the most promising successors of the current mainstream Si fin FET (FinFET) owing to its …
of the most promising successors of the current mainstream Si fin FET (FinFET) owing to its …
Computational study of transition metal dichalcogenide cold source MOSFETs with sub-60 mV per decade and negative differential resistance effect
Y Yin, Z Zhang, C Shao, J Robertson… - npj 2D Materials and …, 2022 - nature.com
To extend the Moore's law in 5 nm node, a large number of two dimensional (2D) materials
and devices have been researched, among which the 'cold'metals 2H MS2 (M= Nb, Ta) with …
and devices have been researched, among which the 'cold'metals 2H MS2 (M= Nb, Ta) with …
Sub-5-nm Monolayer MOSFET with Ultralow Subthreshold Swing and High On-State Current: Dielectric Layer Effects
X Li, P Yuan, L Li, M He, J Li, C Xia - Physical Review Applied, 2022 - APS
With the increasing demand for miniaturized devices and integrated circuits, ultrasmall-scale
device units have attracted increasing attention. However, the short-channel effects severely …
device units have attracted increasing attention. However, the short-channel effects severely …
Monolayer : A promising channel material for sub-5-nm-gate homogeneous CMOS devices
Complementary metal oxide semiconductor (CMOS) devices require both n-type and p-type
metal-oxide-semiconductor field-effect transistors (MOSFETs), but achieving both types that …
metal-oxide-semiconductor field-effect transistors (MOSFETs), but achieving both types that …
Sub-5 nm Gate Length Monolayer MoTe2 Transistors
Since silicon-based field-effect transistors (FETs) are approaching their scaling limit, two-
dimensional (2D) semiconductors have been proposed as alternative channel materials …
dimensional (2D) semiconductors have been proposed as alternative channel materials …
Doubled quantum spin Hall effect with high-spin Chern number in -antimonene and -bismuthene
The discovery of the quantum spin Hall effect (QSHE) has ignited the field of topological
physics with a vast variety of exotic properties. Here we present the emergence of doubled …
physics with a vast variety of exotic properties. Here we present the emergence of doubled …
Device performance and strain effect of sub-5 nm monolayer InP transistors
Indium phosphide (InP) has a higher electron mobility, electron saturation velocity, and drain
current than silicon (Si), and the ultra-thin (UT) InP field-effect transistor (FET) probably …
current than silicon (Si), and the ultra-thin (UT) InP field-effect transistor (FET) probably …