Ga 2 O 3 polymorphs: tailoring the epitaxial growth conditions
Gallium oxide is a wide bandgap n-type semiconductor highly interesting for optoelectronic
applications (eg, power electronics and solar blind UV photodetectors). Besides its most …
applications (eg, power electronics and solar blind UV photodetectors). Besides its most …
β-Ga2O3-Based Power Devices: A Concise Review
Ga2O3 has gained intensive attention for the continuing myth of the electronics as a new-
generation wide bandgap semiconductor, owing to its natural physical and chemical …
generation wide bandgap semiconductor, owing to its natural physical and chemical …
Orthorhombic undoped κ-Ga 2 O 3 epitaxial thin films for sensitive, fast, and stable direct X-ray detectors
Photoelectronic properties of orthorhombic undoped κ-Ga2O3 epitaxial thin films, grown on
sapphire substrates by metal–organic vapour phase epitaxy, were evaluated under X-ray …
sapphire substrates by metal–organic vapour phase epitaxy, were evaluated under X-ray …
HVPE growth and characterization of ε-Ga2O3 films on various substrates
VI Nikolaev, SI Stepanov, AI Pechnikov… - ECS Journal of Solid …, 2020 - iopscience.iop.org
In this study we compare the growth of gallium oxide films by halide vapor phase epitaxy
(HVPE) on various substrates under the same growth conditions. Gallium oxide films were …
(HVPE) on various substrates under the same growth conditions. Gallium oxide films were …
Ga2O3/GaN Heterointerface-Based Self-Driven Broad-Band Ultraviolet Photodetectors with High Responsivity
The broad-band ultraviolet (BBUV) photodetectors (PDs) responding to multiple ultraviolet
(UV) wavelengths (230–400 nm) have received considerable attention in various fields …
(UV) wavelengths (230–400 nm) have received considerable attention in various fields …
A state-of-art review on gallium oxide field-effect transistors
As a promising ultra-wide bandgap (UWBG) semiconductor, gallium oxide (Ga 2 O 3) has
recently aroused increasing attention in the area for high-power electronics, power switch for …
recently aroused increasing attention in the area for high-power electronics, power switch for …
[HTML][HTML] Diamond/β-Ga2O3 pn heterojunction diodes fabricated by low-temperature direct-bonding
Heterojunctions consisting of p-type diamond substrates and thin exfoliated n-type β-Ga 2 O
3 layers were fabricated at a low temperature using a direct-bonding technique. We have …
3 layers were fabricated at a low temperature using a direct-bonding technique. We have …
Highly tunable, polarization-engineered two-dimensional electron gas in ε-AlGaO3/ε-Ga2O3 heterostructures
We report on the modeling of polarization-induced two-dimensional electron gas (2DEG)
formation at ε-AlGaO 3/ε-Ga 2 O 3 heterointerface and the effect of spontaneous polarization …
formation at ε-AlGaO 3/ε-Ga 2 O 3 heterointerface and the effect of spontaneous polarization …
[HTML][HTML] Growth of β-Ga2O3 and ϵ/κ-Ga2O3 on AlN (0001) by molecular-beam epitaxy
S Raghuvansy, JP McCandless, M Schowalter, A Karg… - APL Materials, 2023 - pubs.aip.org
The heteroepitaxial growth and phase formation of Ga 2 O 3 on Al-polar AlN (0001)
templates by molecular-beam epitaxy (MBE) are studied. Three different MBE approaches …
templates by molecular-beam epitaxy (MBE) are studied. Three different MBE approaches …
(AlxGa1-x) 2O3-based materials: Growth, properties, and device applications
H Li, Z Wu, S Wu, P Tian, Z Fang - Journal of Alloys and Compounds, 2023 - Elsevier
In recent years, the (Al x Ga 1-x) 2 O 3 materials have attracted intense research interest due
to their considerable potentials in the fabrication of deep-ultraviolet optoelectronic and high …
to their considerable potentials in the fabrication of deep-ultraviolet optoelectronic and high …