Chalcogenide ovonic threshold switching selector

Z Zhao, S Clima, D Garbin, R Degraeve, G Pourtois… - Nano-Micro Letters, 2024 - Springer
Today's explosion of data urgently requires memory technologies capable of storing large
volumes of data in shorter time frames, a feat unattainable with Flash or DRAM. Intel Optane …

Deep machine learning unravels the structural origin of mid‐gap states in chalcogenide glass for high‐density memory integration

M Xu, M Xu, X Miao - InfoMat, 2022 - Wiley Online Library
The recent development of three‐dimensional semiconductor integration technology
demands a key component—the ovonic threshold switching (OTS) selector to suppress the …

Ovonic threshold switching selectors for three-dimensional stackable phase-change memory

M Zhu, K Ren, Z Song - Mrs Bulletin, 2019 - cambridge.org
High-current switching performance of ovonic threshold switching (OTS) selectors have
successfully enabled the commercialization of high-density three-dimensional (3D) …

How arsenic makes amorphous GeSe a robust chalcogenide glass for advanced memory integration

R Gu, M Xu, C Qiao, CZ Wang, KM Ho, S Wang, M Xu… - Scripta Materialia, 2022 - Elsevier
The 3D integration technology in semiconductor fabrication requires a key component, the
ovonic threshold switching (OTS) selector, to suppress the current leakage. The As doped …

Ovonic threshold switch chalcogenides: connecting the first-principles electronic structure to selector device parameters

S Clima, T Ravsher, D Garbin… - ACS Applied …, 2022 - ACS Publications
Chalcogenides are attractive materials for microelectronics applications due to their ability to
change physical, optical, and electrical properties under applied electric stimulus. One of the …

Composition optimization and device understanding of Si-Ge-As-Te ovonic threshold switch selector with excellent endurance

D Garbin, W Devulder, R Degraeve… - 2019 IEEE …, 2019 - ieeexplore.ieee.org
In this work we explore the composition space of the Ovonic Threshold Switch (OTS)
selector device based on Si-Ge-As-Te material system. Physical Vapor Deposition (PVD) co …

In silico screening for As/Se-free ovonic threshold switching materials

S Clima, D Matsubayashi, T Ravsher… - npj Computational …, 2023 - nature.com
Restricted use of hazardous environmental chemicals is one important challenge that the
semiconductor industry needs to face to improve its sustainability. Ovonic threshold …

Materials selection and mechanism of non-linear conduction in chalcogenide selector devices

H Li, J Robertson - Scientific Reports, 2019 - nature.com
The electronic structure and conduction mechanism of chalcogenide-based Ovonic
threshold switches (OTS) used as selectors in cross-point memory arrays is derived from …

Threshold voltage drift in Te-based ovonic threshold switch devices under various operation conditions

J Yoo, I Karpov, S Lee, J Jung, HS Kim… - IEEE Electron Device …, 2019 - ieeexplore.ieee.org
In this research, we investigate threshold voltage drift in a B-Te based OTS device under
various operation conditions. To this aim, drift of threshold voltage after a switching process …

The investigations of characteristics of GeSe thin films and selector devices for phase change memory

G Liu, L Wu, X Chen, T Li, Y Wang, T Guo, Z Ma… - Journal of Alloys and …, 2019 - Elsevier
Ovonic threshold switching (OTS) selector is a key technology for high-density crossbar
memory array. The basic characteristics of GeSe OTS material including structural …