Two-dimensional transition metal dichalcogenides (2D TMDs) have attracted much attention
in the field of optoelectronics due to their tunable bandgaps, strong interaction with light and …

In recent years, 2D layered materials have emerged as potential candidates in the opto-
electronic field due to their intriguing optical, electrical and mechanical properties …

Highlights The g-C3N4 monolayer in the perfect 2D limit was successfully realized, for the
first time, by the well-defined chemical strategy based on the bottom-up process. The most …

High performance photodetectors based on van der Waals heterostructures (vdWHs) are
crucial to developing micro-nano-optoelectronic devices. However, reports show that it is …

The interest in 2D layered materials based short wavelength infrared (SWIR) photodetectors
(PDs) has escalated over the years with the introduction of new 2D materials showing …

Abstract Gallium oxide (Ga 2 O 3) is an ultrawide-bandgap semiconductor material that has
gained attention in recent years owing to its potential applications in optoelectronic devices …

Integrated mixed-dimensional (MD) van der Waals (vdWs) heterojunctions for self-powered
photodetectors have attracted intense attention. Performances of these photodetectors are …

Flexible image sensors with good detectivity, high mechanical stability, and excellent
flexibility have generated great interest in biomimetic visual applications. Semiconductor …

Atomically thin two-dimensional (2D) materials make it possible to create a variety of van der
Waals (vdW) heterostructures with different physical features and attributes, which enables …

GeSe is a layered p-type semiconductor with intriguing optoelectrical properties such as
high absorption coefficient, high carrier mobility, and narrow bandgap, which promises a …