Interfacial chemistry of oxides on InxGa (1− x) As and implications for MOSFET applications
The prospect of enhanced device performance from III–V materials has been recognized for
at least 50years, and yet, relative to the phenomenal size of the Si-based IC industry, these …
at least 50years, and yet, relative to the phenomenal size of the Si-based IC industry, these …
Method for manufacturing a low defect interface between a dielectric and a III-V compound
C Merckling - US Patent 8,314,017, 2012 - Google Patents
The present invention is related to a method for manufacturing a low defect interface
between a dielectric material and an III-V compound. More specifically, the present invention …
between a dielectric material and an III-V compound. More specifically, the present invention …
Comparison of methods to quantify interface trap densities at dielectric/III-V semiconductor interfaces
R Engel-Herbert, Y Hwang, S Stemmer - Journal of applied physics, 2010 - pubs.aip.org
Methods to extract trap densities at high-permittivity (k) dielectric/III-V semiconductor
interfaces and their distribution in the semiconductor band gap are compared. The …
interfaces and their distribution in the semiconductor band gap are compared. The …
Surface passivation of III–V semiconductors for future CMOS devices—Past research, present status and key issues for future
H Hasegawa, M Akazawa, A Domanowska… - Applied surface …, 2010 - Elsevier
Currently, III–V metal–insulator–semiconductor field effect transistors (MISFETs) are
considered to be promising device candidates for the so-called “More Moore Approach” to …
considered to be promising device candidates for the so-called “More Moore Approach” to …
Interface engineering and chemistry of Hf-based high-k dielectrics on III–V substrates
G He, X Chen, Z Sun - Surface Science Reports, 2013 - Elsevier
Recently, III–V materials have been extensively studied as potential candidates for post-Si
complementary metal-oxide-semiconductor (CMOS) channel materials. The main obstacle …
complementary metal-oxide-semiconductor (CMOS) channel materials. The main obstacle …
Detection of Ga suboxides and their impact on III-V passivation and Fermi-level pinning
The passivation of interface states remains an important problem for III-V based
semiconductor devices. The role of the most stable bound native oxides GaO x (0.5≤ x≤ …
semiconductor devices. The role of the most stable bound native oxides GaO x (0.5≤ x≤ …
Interface control and modification of band alignment and electrical properties of HfTiO/GaAs gate stacks by nitrogen incorporation
Effects of nitrogen incorporation on the interface chemical bonding states, optical dielectric
function, band alignment, and electrical properties of sputtering-derived HfTiO high-k gate …
function, band alignment, and electrical properties of sputtering-derived HfTiO high-k gate …
Defect states at III-V semiconductor oxide interfaces
L Lin, J Robertson - Applied Physics Letters, 2011 - pubs.aip.org
Models of insulating interfaces between (100) GaAs and HfO 2, Gd 2 O 3, and Al 2 O 3
are constructed and used to host various interfacial defects to see which give rise to gap …
are constructed and used to host various interfacial defects to see which give rise to gap …
Defect state passivation at III-V oxide interfaces for complementary metal–oxide–semiconductor devices
J Robertson, Y Guo, L Lin - Journal of Applied Physics, 2015 - pubs.aip.org
The paper describes the reasons for the greater difficulty in the passivation of interface
defects of III–V semiconductors like GaAs. These include the more complex reconstructions …
defects of III–V semiconductors like GaAs. These include the more complex reconstructions …
Interface engineering with an AlO x dielectric layer enabling an ultrastable Ta 3 N 5 photoanode for photoelectrochemical water oxidation
Photoelectrochemical water splitting is a promising approach for solar energy to chemical
energy conversion. However, the development of highly stable and efficient photoanodes …
energy conversion. However, the development of highly stable and efficient photoanodes …