A 3-D vertical Hall magnetic-field sensor in CMOS technology

M Paranjape, I Filanovsky, L Ristic - Sensors and Actuators A: Physical, 1992 - Elsevier
A new silicon sensor capable of detecting all three components of a magnetic field is
presented. The device is based on a vertical Hall structure and has been designed and …

A 3-D GaAs-based Hall sensor design with dual active layers structure

Q Wang, J Dong, L Jin, T Wen, Z Zhong - Sensors and Actuators A …, 2024 - Elsevier
A fully integrated 3-D Hall magnetic sensor with dual active structure was proposed. Results
by technology computer-aided design simulation show that the proposed sensor provides a …

A CMOS-compatible 2-D vertical Hall magnetic-field sensor using active carrier confinement and post-process micromachining

M Paranjape, LM Landsberger, M Kahrizi - Sensors and Actuators A …, 1996 - Elsevier
This work presents a CMOS-based magnetic-field sensor for the detection of magnetic-field
vector components that occur parallel to the chip surface. The device employs two vertical …

2-D differential folded vertical Hall device fabricated on a p-type substrate using CMOS technology

GM Sung, CP Yu - IEEE Sensors Journal, 2013 - ieeexplore.ieee.org
This paper investigates a two-dimensional (2-D) differential folded vertical Hall device (VHD)
fabricated using standard 0.35 μm CMOS technology. To minimize the cross-coupling noise …

Two-dimensional folded CMOS Hall device with interacting lateral magnetotransistor and magnetoresistor

CP Yu, GM Sung - Sensors and Actuators A: Physical, 2012 - Elsevier
This study investigates a two-dimensional folded Hall device fabricated by standard 0.35-μm
CMOS process. The effective conduction length is shortened by folding the device, and the …

Three-dimensional CMOS differential folded Hall sensor with bandgap reference and readout circuit

GM Sung, LC Gunnam, HK Wang… - IEEE Sensors …, 2017 - ieeexplore.ieee.org
This paper presents a 3-D differential folded Hall sensor (HS) fabricated using standard 0.18-
μm CMOS technology; this HS includes 1-D folded lateral Hall sensor (FLHS) and 2-D …

Elimination of cross sensitivity in a three-dimensional magnetic sensor

D Misra, B Wang - IEEE transactions on electron devices, 1994 - ieeexplore.ieee.org
In three-dimensional (3-D) integrated magnetic sensor design, cross-axis sensitivities
among the various components of the magnetic field have been a problem. In this brief it is …

二維摺疊型霍爾感測器晶片之研究與應用

CP Yu - 臺北科技大學電機工程系博士班學位論文, 2012 - airitilibrary.com
This dissertation analyzes the individual and mutual magnetic effects among
magnetoresistor (MR), vertical magnetoresistor (VMR), bulk magnetotransistor (BMT), lateral …

Multi-dimensional detection of magnetic fields using CMOS integrated sensors

M Paranjape, LJ Ristic - IEEE transactions on magnetics, 1991 - ieeexplore.ieee.org
Silicon sensors which are capable of detecting the two in-plane components of magnetic
field, as well as all three components of the magnetic field vector, are presented. The …

A vertical Hall magnetic field sensor using CMOS-compatible micromachining techniques

M Paranjape, L Ristic… - Technical Digest IEEE …, 1992 - ieeexplore.ieee.org
A novel magnetic field sensor for two-dimensional detection of magnetic fields has been
simulated, designed, manufactured, and tested. The device is made as a vertical Hall …