Traditional terahertz (THz) equipment faces major obstacles in providing the system cost
and compactness necessary for widespread deployment of THz applications. Because of …

Silicon-based terahertz (THz) integrated circuits (ICs) have made rapid progress over the
past decade. The demonstrated basic component performance, as well as the maturity of …

This invited paper reviews the progress of silicon–germanium (SiGe) bipolar-complementary
metal–oxide–semiconductor (BiCMOS) technology-based integrated circuits (ICs) during the …

The unique fingerprint spectra of volatile organic compounds for breath analysis and toxic
industrial chemicals make an mm-wave (mmW)/THz gas sensor very specific and sensitive …

The definition for the frequency range of a terahertz wave varies in the literature. Some refer
to terahertz as the spectrum between 300 GHz (λ= 1 mm) and 3 THz (λ= 0.1 mm) to …

This paper describes the design and implementation of a 220-320 GHz spectrometer
consisting of a pair of 65-nm CMOS chips. The spectrometer utilizes two counterpropagating …

This paper reports a 32-unit phase-locked dense heterodyne receiver array at f RF= 240
GHz. To synthesize a large receiving aperture without large sidelobe response, this chip has …

Millimeter-wave/terahertz rotational spectroscopy of polar gaseous molecules provides a
powerful tool for complicated gas mixture analysis. In this paper, a 220-to-320-GHz dual …

This invited paper reviews the progress of silicon-based integrated analyzers for biomedical
applications over the last two decades. Focus is set on various integrated circuit realizations …

A 200-225 GHz SiGe combiner Power Amplifier (PA) based on a wideband 4-way power
combiner architecture is presented in this paper. The circuit is implemented in a 130 nm …