Dilute ferromagnetic semiconductors: Physics and spintronic structures

T Dietl, H Ohno - Reviews of Modern Physics, 2014 - APS
This review compiles results of experimental and theoretical studies on thin films and
quantum structures of semiconductors with randomly distributed Mn ions, which exhibit …

Spin-dependent phenomena and device concepts explored in (Ga, Mn) As

T Jungwirth, J Wunderlich, V Novák, K Olejník… - Reviews of Modern …, 2014 - APS
Over the past two decades, the research of (Ga, Mn) As has led to a deeper understanding
of relativistic spin-dependent phenomena in magnetic systems. It has also led to discoveries …

Electrical spin injection and detection in lateral all-semiconductor devices

M Ciorga, A Einwanger, U Wurstbauer, D Schuh… - Physical Review B …, 2009 - APS
Both electrical injection and detection of spin-polarized electrons are demonstrated in a
single wafer all-semiconductor GaAs-based lateral spintronic device, employing p+-(Ga, Mn) …

Origin and control of ferromagnetism in dilute magnetic semiconductors and oxides

T Dietl - Journal of Applied Physics, 2008 - pubs.aip.org
The author reviews the present understanding of the hole-mediated ferromagnetism in
magnetically doped semiconductors and oxides as well as the origin of high temperature …

Anisotropic tunneling magnetoresistance and tunneling anisotropic magnetoresistance: Spin-orbit coupling in magnetic tunnel junctions

A Matos-Abiague, J Fabian - Physical Review B—Condensed Matter and …, 2009 - APS
The effects of the spin-orbit coupling (SOC) on the tunneling magnetoresistance of
ferromagnet/semiconductor/normal-metal tunnel junctions are investigated. Analytical …

Interplay between carrier localization and magnetism in diluted magnetic and ferromagnetic semiconductors

T Dietl - Journal of the Physical Society of Japan, 2008 - journals.jps.jp
The presence of localized spins exerts a strong influence on quantum localization in doped
semiconductors. At the same time carrier-mediated interactions between the localized spins …

Momentum-resolved spin splitting in Mn-doped trivial CdTe and topological HgTe semiconductors

C Autieri, C Śliwa, R Islam, G Cuono, T Dietl - Physical Review B, 2021 - APS
Exchange coupling between localized spins and band or topological states accounts for
giant magnetotransport and magneto-optical effects as well as determines spin-spin …

Fermi level position, Coulomb gap and Dresselhaus splitting in (Ga, Mn) As

S Souma, L Chen, R Oszwałdowski, T Sato… - Scientific Reports, 2016 - nature.com
Carrier-induced nature of ferromagnetism in a ferromagnetic semiconductor,(Ga, Mn) As,
offers a great opportunity to observe novel spin-related phenomena as well as to …

Angular dependence of the tunneling anisotropic magnetoresistance in magnetic tunnel junctions

A Matos-Abiague, M Gmitra, J Fabian - Physical Review B—Condensed Matter …, 2009 - APS
Based on general symmetry considerations, we investigate how the dependence of the
tunneling anisotropic magnetoresistance (TAMR) on the magnetization direction is …

Spin transport theory in ferromagnet/semiconductor systems with noncollinear magnetization configurations

Y Song, H Dery - Physical Review B—Condensed Matter and Materials …, 2010 - APS
We present a comprehensive theory of spin transport in a nondegenerate semiconductor
that is in contact with multiple ferromagnetic terminals. The spin dynamics in the …