Over the past two decades, the research of (Ga, Mn) As has led to a deeper understanding of relativistic spin-dependent phenomena in magnetic systems. It has also led to discoveries …
M Ciorga, A Einwanger, U Wurstbauer, D Schuh… - Physical Review B …, 2009 - APS
Both electrical injection and detection of spin-polarized electrons are demonstrated in a single wafer all-semiconductor GaAs-based lateral spintronic device, employing p+-(Ga, Mn) …
T Dietl - Journal of Applied Physics, 2008 - pubs.aip.org
The author reviews the present understanding of the hole-mediated ferromagnetism in magnetically doped semiconductors and oxides as well as the origin of high temperature …
The effects of the spin-orbit coupling (SOC) on the tunneling magnetoresistance of ferromagnet/semiconductor/normal-metal tunnel junctions are investigated. Analytical …
T Dietl - Journal of the Physical Society of Japan, 2008 - journals.jps.jp
The presence of localized spins exerts a strong influence on quantum localization in doped semiconductors. At the same time carrier-mediated interactions between the localized spins …
Exchange coupling between localized spins and band or topological states accounts for giant magnetotransport and magneto-optical effects as well as determines spin-spin …
S Souma, L Chen, R Oszwałdowski, T Sato… - Scientific Reports, 2016 - nature.com
Carrier-induced nature of ferromagnetism in a ferromagnetic semiconductor,(Ga, Mn) As, offers a great opportunity to observe novel spin-related phenomena as well as to …
Based on general symmetry considerations, we investigate how the dependence of the tunneling anisotropic magnetoresistance (TAMR) on the magnetization direction is …
Y Song, H Dery - Physical Review B—Condensed Matter and Materials …, 2010 - APS
We present a comprehensive theory of spin transport in a nondegenerate semiconductor that is in contact with multiple ferromagnetic terminals. The spin dynamics in the …