Tandem GaAsP/SiGe on Si solar cells

M Diaz, L Wang, D Li, X Zhao, B Conrad… - Solar Energy Materials …, 2015 - Elsevier
GaAsP/SiGe dual-junction solar cells have been epitaxially grown on silicon substrates
which have the potential of achieving 1-sun tandem efficiencies of 40%. With the addition of …

Simulation study of GaAsP/Si tandem solar cells

A Onno, NP Harder, L Oberbeck, H Liu - Solar Energy Materials and Solar …, 2016 - Elsevier
A model, adapted from the Shockley–Queisser detailed balance model to tandem solar cells
with a monolithically grown GaAs x P 1− x top junction on a Si bottom junction, has been …

Current matched three-terminal dual junction GaAsP/SiGe tandem solar cell on Si

L Wang, B Conrad, A Soeriyadi, X Zhao, D Li… - Solar Energy Materials …, 2016 - Elsevier
Lattice matched and current matched GaAsP/SiGe tandem solar cells on Si have the
potential of 40% conversion efficiency [8]. A corrected three-terminal tandem efficiency of …

Material and device improvement of GaAsP top solar cells for GaAsP/SiGe tandem solar cells grown on Si substrates

L Wang, M Diaz, B Conrad, X Zhao, D Li… - IEEE Journal of …, 2015 - ieeexplore.ieee.org
With its wide bandgap and good diode performance, GaAsP is an excellent candidate for the
top cell in a silicon-based multijunction tandem device. Even though the material is not …

Material and device analysis of SiGe solar cell in a GaAsP–SiGe dual junction solar cell on Si substrate

X Zhao, D Li, B Conrad, L Wang, AH Soeriyadi… - Solar Energy Materials …, 2015 - Elsevier
Abstract Low bandgap Si (1− x) Ge (x) solar cells are designed, fabricated, characterized
and analyzed for the purpose of acting as the bottom cell in a GaAsP–SiGe tandem solar …

Dual-junction GaAsP/SiGe on silicon tandem solar cells

M Diaz, L Wang, A Gerger, A Lochtefeld… - 2014 IEEE 40th …, 2014 - ieeexplore.ieee.org
GaAsP/SiGe dual-junction solar cells have been grown on silicon substrates which have the
potential of achieving tandem efficiencies of 40%. This lattice-matched structure facilitates …

Optical characterisation of III-V alloys grown on Si by spectroscopic ellipsometry

B Conrad, A Lochtefeld, A Gerger, A Barnett… - Solar Energy Materials …, 2017 - Elsevier
Increased interest in novel substrates for III-V material growth has led to the use of alloy
fractions other than those lattice-matched to traditional GaAs and Ge substrates. The optical …

[图书][B] Role of surface chemistry in improving performances of electronic devices

B Yuan - 2017 - search.proquest.com
Surface science and chemistry have been researched in many different disciplines. In this
dissertation, the role of surface chemistry in improving performances of electronic devices …

[HTML][HTML] Ion bombardment induced formation of self-organized wafer-scale GaInP nanopillar assemblies

D Visser, J Jaramillo-Fernandez, G Haddad… - Journal of Vacuum …, 2020 - pubs.aip.org
Ion sputtering assisted formation of nanopillars is demonstrated as a wafer-scale,
lithography-free fabrication method to obtain high optical quality gallium indium phosphide …

Increased Spectrum Utilization with GaAsP/SiGe Solar Cells Grown on Silicon Substrates

AH Soeriyadi, B Conrad, X Zhao, D Li, L Wang… - MRS …, 2016 - cambridge.org
World-record solar-to-electricity energy conversion efficiency has been previously achieved
by photovoltaic devices that maximize the use of the solar spectrum, such as multi-junction …