Sub-10 nm two-dimensional transistors: Theory and experiment
Presently Si-based field-effect transistors (FETs) are approaching their physical limit, and
further scaling their gate length down to the sub-10 nm region is becoming extremely …
further scaling their gate length down to the sub-10 nm region is becoming extremely …
Schottky barrier heights in two-dimensional field-effect transistors: from theory to experiment
Over the past decade, two-dimensional semiconductors (2DSCs) have aroused wide
interest due to their extraordinary electronic, magnetic, optical, mechanical, and thermal …
interest due to their extraordinary electronic, magnetic, optical, mechanical, and thermal …
The role of traps in the photocurrent generation mechanism in thin InSe photodetectors
Q Zhao, W Wang, F Carrascoso-Plana, W Jie… - Materials …, 2020 - pubs.rsc.org
Due to the excellent electrical transport properties and optoelectronic performance, thin
indium selenide (InSe) has recently attracted attention in the field of 2D semiconducting …
indium selenide (InSe) has recently attracted attention in the field of 2D semiconducting …
Performance limit of monolayer MoSi 2 N 4 transistors
Recently, a novel two-dimensional (2D) MoSi2N4 has been successfully synthesized and
features high carrier mobility, moderate bandgap, and outstanding ambient stability (Science …
features high carrier mobility, moderate bandgap, and outstanding ambient stability (Science …
Efficient Ohmic Contact in Monolayer CrX2N4 (X = C, Si) Based Field‐Effect Transistors
Y Shu, Y Liu, Z Cui, R Xiong, Y Zhang… - Advanced Electronic …, 2023 - Wiley Online Library
Developing Ohmic contact systems or achieving low contact resistance is significant for high‐
performance semiconductor devices. This work comprehensively investigates the interfacial …
performance semiconductor devices. This work comprehensively investigates the interfacial …
First-Principles Investigation of MXene/MoSi2N4 van der Waals Heterostructures: Strong Fermi Level Pinning Effect Resulting in Ohmic Contact with Low Contact …
J Wang, Z Zhang, J Shen, M Zhang… - The Journal of Physical …, 2023 - ACS Publications
High-performance semiconductor devices require ohmic contact (OhC) with low contact
resistance, which are widely associated with weak Fermi level pinning (FLP) effects …
resistance, which are widely associated with weak Fermi level pinning (FLP) effects …
Performance Limit of Monolayer WSe2 Transistors; Significantly Outperform Their MoS2 Counterpart
With the scaling limits of silicon-based MOS technology, the critical and challenging issue is
to explore more and more alternative materials to improve the performance of devices. Two …
to explore more and more alternative materials to improve the performance of devices. Two …
Electrical Contacts in Monolayer MoSi2N4 Transistors
The latest synthesized monolayer (ML) MoSi2N4 material exhibits stability in ambient
conditions, suitable bandgap, and high mobilities. Its potential as a next-generation …
conditions, suitable bandgap, and high mobilities. Its potential as a next-generation …
Reexamination of the Schottky Barrier Heights in Monolayer MoS2 Field-Effect Transistors
Owing to its promising electronic application of monolayer (ML) MoS2, ML MoS2–metal
contacts have been widely explored. The experiments reveal a very strong Fermi level …
contacts have been widely explored. The experiments reveal a very strong Fermi level …
Modulating the Schottky barrier of MXenes/2D SiC contacts via functional groups and biaxial strain: a first-principles study
L Huang, X Deng, S Pan, W Cui - Physical Chemistry Chemical …, 2022 - pubs.rsc.org
Two-dimensional (2D) graphene-like SiC has attracted intense interest recently due to its
unique electrical and physical properties. In implementing 2D semiconductors in device …
unique electrical and physical properties. In implementing 2D semiconductors in device …